Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE
Kumagai, Yoshinao, Enatsu, Yuuki, Ishizuki, Masanari, Kubota, Yuki, Tajima, Jumpei, Nagashima, Toru, Murakami, Hisashi, Takada, Kazuya, Koukitu, Akinori
Published in Journal of crystal growth (01.09.2010)
Published in Journal of crystal growth (01.09.2010)
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Journal Article
Control of in-plane epitaxial relationship of c -plane AlN layers grown on a -plane sapphire substrates by hydride vapor phase epitaxy
Tajima, Jumpei, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Takada, Kazuya, Koukitu, Akinori
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
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Journal Article
Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
Kumagai, Yoshinao, Tajima, Jumpei, Ishizuki, Masanari, Nagashima, Toru, Murakami, Hisashi, Takada, Kazuya, Koukitu, Akinori
Published in Applied physics express (01.04.2008)
Published in Applied physics express (01.04.2008)
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Journal Article
Carrier Gas Dependence at Initial Processes for $a$-Plane AlN Growth on $r$-Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy
Tajima, Jumpei, Echizen, Chikashi, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Takada, Kazuya, Koukitu, Akinori
Published in Japanese Journal of Applied Physics (01.05.2011)
Published in Japanese Journal of Applied Physics (01.05.2011)
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Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures
Kato, Daimotsu, Kajiwara, Yosuke, Mukai, Akira, Ono, Hiroshi, Shindome, Aya, Tajima, Jumpei, Hikosaka, Toshiki, Kuraguchi, Masahiko, Nunoue, Shinya
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING PROGRAM
TAJIMA JUMPEI, MORIMOTO AYAKA, SUZUKI RYOTA, NAGAMEGURI YUTO, ENDO RYO, KAWAMATA RYO, MASUKAWA TAKESHI
Year of Publication 19.01.2024
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Year of Publication 19.01.2024
Patent
SEMICONDUCTOR LIGHT EMITTING ELEMENT
ITO TOSHIHIDE, TAJIMA JUMPEI, UESUGI KENJIRO, ONO HIROSHI, NUNOUE SHINYA
Year of Publication 03.03.2016
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Year of Publication 03.03.2016
Patent
METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT
TAJIMA JUMPEI, SATO TAISUKE, ZAIMA KOTARO, NUNOUE SHINYA, SUGIYAMA NAOHARU
Year of Publication 26.03.2014
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Year of Publication 26.03.2014
Patent
SEMICONDUCTOR LIGHT EMITTING ELEMENT
ITO TOSHIHIDE, TAJIMA JUMPEI, UESUGI KENJIRO, ONO HIROSHI, KIMURA SHIGEYA, NUNOUE SHINYA
Year of Publication 15.01.2016
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Year of Publication 15.01.2016
Patent
METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT
TAJIMA JUMPEI, SATO TAISUKE, ZAIMA KOTARO, NUNOUE SHINYA, SUGIYAMA NAOHARU
Year of Publication 19.06.2013
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Year of Publication 19.06.2013
Patent
Carrier Gas Dependence at Initial Processes for a -Plane AlN Growth on r -Plane Sapphire Substrates by Hydride Vapor Phase Epitaxy
Tajima, Jumpei, Echizen, Chikashi, Togashi, Rie, Murakami, Hisashi, Kumagai, Yoshinao, Takada, Kazuya, Koukitu, Akinori
Published in Japanese Journal of Applied Physics (01.05.2011)
Published in Japanese Journal of Applied Physics (01.05.2011)
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Journal Article