Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits
Cote, D R, Nguyen, S V, Stamper, A K, Armbrust, D S
Published in IBM journal of research and development (01.01.1999)
Published in IBM journal of research and development (01.01.1999)
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High temperature subatmospheric chemical vapor deposited undoped silicate glass: A solution for next generation shallow trench isolation
XIA, L.-Q, NEMANI, S, GALIANO, M, PICHAI, S, CHANDRAN, S, YIEH, E, COTE, D, CONTI, R, RESTAINO, D, TÖBBEN, D
Published in Journal of the Electrochemical Society (01.03.1999)
Published in Journal of the Electrochemical Society (01.03.1999)
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High mobility 2-D hole gases in strained Ge channels on Si substrates studied by magnetotransport and cyclotron resonance
Engelhardt, C.M., Többen, D., Aschauer, M., Schäffler, F., Abstreiter, G., Gornik, E.
Published in Solid-state electronics (01.04.1994)
Published in Solid-state electronics (01.04.1994)
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Conference Proceeding
Aluminum dual damascene metallization for 0.175 μm DRAM generations and beyond ( invited)
Schnabel, R.F, Clevenger, L.A, Costrini, G, Dobuzinsky, D.M, Filippi, R, Gambino, J, Lee, G.Y, Iggulden, R.C, Lin, C, Lu, Z.G, Ning, X.J, Ramachandran, R, Ronay, M, Többen, D, Weber, S.J
Published in Microelectronic engineering (2000)
Published in Microelectronic engineering (2000)
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Conference Proceeding
Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures
Holzmann, M., Többen, D., Baumgartner, P., Abstreiter, G., Kriele, A., Lorenz, H., Schäffler, F.
Published in Surface science (01.07.1996)
Published in Surface science (01.07.1996)
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Growth and properties of high-mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates
Nützel, J.F., Engelhardt, C.M., Wiesner, R., Többen, D., Holzmann, M., Abstreiter, G.
Published in Journal of crystal growth (1995)
Published in Journal of crystal growth (1995)
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High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
Schaffler, F, Tobben, D, Herzog, H -J, Abstreiter, G, Hollander, B
Published in Semiconductor science and technology (01.02.1992)
Published in Semiconductor science and technology (01.02.1992)
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Antidot superlattices in two-dimensional hole gases confined in strained germanium layers
Tobben, D, Holzmann, M, Abstreiter, G, Kriele, A, Lorenz, H, Kotthaus, J P, Schaffler, F, Xie, Y H, Silverman, P J, Monroe, D
Published in Semiconductor science and technology (01.10.1995)
Published in Semiconductor science and technology (01.10.1995)
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High mobility two-dimensional electron gases in Si/Si1-xGex heterostructures grown by MBE
TÖBBEN, D, SCHÄFFLER, F, BESSON, M, ENGELHARDT, C. M, ZRENNER, A, ABSTREITER, G, GORNIK, E
Published in Journal of crystal growth (02.02.1993)
Published in Journal of crystal growth (02.02.1993)
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Electron transport through antidot superlattices in Si/Si0.7Ge0.3 heterostructures
Többen, D, Holzmann, M, Kühn, S, Lorenz, H, Abstreiter, G, Kotthaus, JP, Schäffler, F
Published in Physical review. B, Condensed matter (15.09.1994)
Published in Physical review. B, Condensed matter (15.09.1994)
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Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure
Holzmann, M., Többen, D., Abstreiter, G., Schäffler, F.
Published in Journal of applied physics (15.09.1994)
Published in Journal of applied physics (15.09.1994)
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Effects of a novel mental skills curriculum on surgical novices' attention
Anton, N.E, Mulji, N, Howley, L.D, Yurco, A.M, Tobben, D, Bean, E, Stefanidis, D
Published in The Journal of surgical research (01.11.2017)
Published in The Journal of surgical research (01.11.2017)
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Magnetotransport studies of remote doped Si/Si1-xGex heterostructures grown on relaxed SiGe buffer layers
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Magnetotransport of electrons in arrays of wires in Si/Si 0.7Ge 0.3 heterostructures
Holzmann, M., Többen, D., Baumgartner, P., Abstreiter, G., Kriele, A., Lorenz, H., Schäffler, F.
Published in Surface science (1996)
Published in Surface science (1996)
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