0.18 µm BCD technology platform with best-in-class 6 V to 70 V power MOSFETs
Chou, Hsueh-Liang, Su, P. C., Ng, J. C. W., Wang, P. L., Lu, H. T., Lee, C. J., Syue, W. J., Yang, S. Y., Tseng, Y. C., Cheng, C. C., Yao, C. W., Liou, R. S., Jong, Y. C., Tsai, J. L., Cai, Jun, Tuan, H. C., Huang, Chih-Fang, Gong, Jeng
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
Published in 2012 24th International Symposium on Power Semiconductor Devices and ICs (01.06.2012)
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