Search Results - "Swain, Peeyusha Saurabha" :: K.UTB vyhledávací portál

Device-Circuit Co-design for Beyond 1 GHz 5 V Level Shifter Using DeMOS Transistors

by Swain, Peeyusha Saurabha, Shrivastava, Mayank, Gossner, Harald, Baghini, Maryam Shojaei
Published in IEEE transactions on electron devices (01.11.2013)

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An Island Drain Double-Gate DeMOS With Self-Aligned Sub-Gate to Achieve Multifold Transient Frequency Enhancement

by Daulatabad, Shreeniwas, Swain, Peeyusha Saurabha, Gossner, Harald, Baghini, Maryam Shojaei
Published in IEEE transactions on electron devices (01.09.2022)

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On the Geometrically Dependent Quasi-Saturation and g Reduction in Advanced DeMOS Transistors

by Swain, Peeyusha Saurabha, Shrivastava, Mayank, Baghini, Maryam Shojaei, Gossner, Harald, Rao, Valipe Ramgopal
Published in IEEE transactions on electron devices (01.04.2016)

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On the Geometrically Dependent Quasi-Saturation and Reduction in Advanced DeMOS Transistors

by Swain, Peeyusha Saurabha, Shrivastava, Mayank, Baghini, Maryam Shojaei, Gossner, Harald, Rao, Valipe Ramgopal
Published in IEEE transactions on electron devices (01.04.2016)

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Device-circuit co-design for high performance level shifter by limiting quasi-saturation effects in advanced DeMOS transistors

by Swain, Peeyusha Saurabha, Baghini, Maryam Shojaei, Rao, V. Ramgopal, Shrivastava, Mayank, Gossner, Harald
Published in 2016 IEEE International Nanoelectronics Conference (INEC) (01.05.2016)

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Conference Proceeding

Device-Circuit Co-design for Beyond 1 GHz 5 V Level Shifter Using DeMOS Transistors

An Island Drain Double-Gate DeMOS With Self-Aligned Sub-Gate to Achieve Multifold Transient Frequency Enhancement

On the Geometrically Dependent Quasi-Saturation and g Reduction in Advanced DeMOS Transistors

On the Geometrically Dependent Quasi-Saturation and Reduction in Advanced DeMOS Transistors

Device-circuit co-design for high performance level shifter by limiting quasi-saturation effects in advanced DeMOS transistors

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