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Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET
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Journal Article
Conference Proceeding
Characterization of thermally oxidized Ta/GaAs Schottky barrier structures prepared by low energy RF sputtering with X-ray photoemission, TEM and optical transmittance measurements
Gladkov, P., Varblianska, K., Marinova, Ts, Krastev, V., Stoemenos, J.
Published in Applied surface science (1992)
Published in Applied surface science (1992)
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Journal Article