Atomic surface structure of MOVPE-prepared GaP(111)B
Kleinschmidt, P., Mutombo, P., Berthold, T., Paszuk, A., Steidl, M., Ecke, G., Nägelein, A., Koppka, C., Supplie, O., Krischok, S., Romanyuk, O., Himmerlich, M., Hannappel, T.
Published in Applied surface science (30.12.2020)
Published in Applied surface science (30.12.2020)
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Journal Article
Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy
Zhao, W., Steidl, M., Paszuk, A., Brückner, S., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T.
Published in Applied surface science (15.01.2017)
Published in Applied surface science (15.01.2017)
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Journal Article
GaP/Si(0 0 1) interface study by XPS in combination with Ar gas cluster ion beam sputtering
Romanyuk, O., Gordeev, I., Paszuk, A., Supplie, O., Stoeckmann, J.P., Houdkova, J., Ukraintsev, E., Bartoš, I., Jiříček, P., Hannappel, T.
Published in Applied surface science (01.06.2020)
Published in Applied surface science (01.06.2020)
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Journal Article
Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient
Brückner, Sebastian, Kleinschmidt, Peter, Supplie, Oliver, Döscher, Henning, Hannappel, Thomas
Published in New journal of physics (26.11.2013)
Published in New journal of physics (26.11.2013)
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Journal Article
In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient
Barrigón, Enrique, Brückner, Sebastian, Supplie, Oliver, Döscher, Henning, Rey-Stolle, Ignacio, Hannappel, Thomas
Published in Journal of crystal growth (01.05.2013)
Published in Journal of crystal growth (01.05.2013)
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Journal Article
Conference Proceeding
Interface and surface dielectric anisotropies of GaP/Si(100)
Supplie, O., Hannappel, T., Pristovsek, M., Doscher, H.
Published in 2012 International Conference on Indium Phosphide and Related Materials (01.08.2012)
Published in 2012 International Conference on Indium Phosphide and Related Materials (01.08.2012)
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Conference Proceeding
In situ characterization of III-V/Si(100) anti-phase disorder
Doscher, H., Supplie, O., Bruckner, S., Hannappel, T.
Published in IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials (01.05.2011)
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Published in IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials (01.05.2011)
Conference Proceeding
Double-layer stepped Si(100) for III-V-on-silicon integration
Doscher, H., Kleinschmidt, P., Brückner, S., Supplie, O., Dobrich, A., Hannappel, T.
Published in 2012 International Conference on Indium Phosphide and Related Materials (01.08.2012)
Published in 2012 International Conference on Indium Phosphide and Related Materials (01.08.2012)
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Conference Proceeding
Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates
Bruckner, S., Supplie, O., Barrigon, E., Kleinschmidt, P., Dobrich, A., Rey-Stolle, I., Algora, C., Doscher, H., Hannappel, T.
Published in 2011 37th IEEE Photovoltaic Specialists Conference (01.06.2011)
Published in 2011 37th IEEE Photovoltaic Specialists Conference (01.06.2011)
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Conference Proceeding
MOVPE preparation and in situ spectroscopy of Si(100) substrates for III-V heteroepitaxy
Bruckner, S., Doscher, H., Dobrich, A., Supplie, O., Kleinschmidt, P., Hannappel, T.
Published in IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials (01.05.2011)
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Published in IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials (01.05.2011)
Conference Proceeding