Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress
JONG IN KIM, CHO, In-Tak, JOE, Sung-Min, JEONG, Chan-Yong, DAEUN LEE, KWON, Hyuck-In, SUNG HUN JIN, LEE, Jong-Ho
Published in IEEE electron device letters (01.04.2014)
Published in IEEE electron device letters (01.04.2014)
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Journal Article
Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String
JOE, Sung-Min, YI, Jeong-Hyong, PARK, Sung-Kye, SHIN, Hyungcheol, PARK, Byung-Gook, YOUNG JUNE PARK, LEE, Jong-Ho
Published in IEEE transactions on electron devices (01.01.2011)
Published in IEEE transactions on electron devices (01.01.2011)
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Journal Article
Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure
Kang, Ho-Jung, Choi, Nagyong, Joe, Sung-Min, Seo, Ji-Hyun, Choi, Eunseok, Park, Sung-Kye, Park, Byung-Gook, Lee, Jong-Ho
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
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Conference Proceeding
Journal Article
A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput
Lee, Seungjae, Kim, Chulbum, Kim, Minsu, Joe, Sung-min, Jang, Joonsuc, Kim, Seungbum, Lee, Kangbin, Kim, Jisu, Park, Jiyoon, Lee, Han-Jun, Kim, Minseok, Lee, Seonyong, Lee, SeonGeon, Bang, Jinbae, Shin, Dongjin, Jang, Hwajun, Lee, Deokwoo, Kim, Nahyun, Jo, Jonghoo, Park, Jonghoon, Park, Sohyun, Rho, Youngsik, Park, Yongha, Kim, Ho-joon, Lee, Cheon An, Yu, Chungho, Min, Youngsun, Kim, Moosung, Kim, Kyungmin, Moon, Seunghyun, Kim, Hyunjin, Choi, Youngdon, Ryu, YoungHwan, Choi, Jinwon, Lee, Minyeong, Kim, Jungkwan, Choo, Gyo Soo, Lim, Jeong-Don, Byeon, Dae-Seok, Song, Kiwhan, Park, Ki-Tae, Kyung, Kye-hyun
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01.02.2018)
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01.02.2018)
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Conference Proceeding
A Subthreshold Slope and Low-frequency Noise Characteristics in Charge Trap Flash Memories with Gate-All-Around and Planar Structure
Lee, Myoung-Sun, Joe, Sung-Min, Yun, Jang-Gn, Shin, Hyung-Cheol, Park, Byung-Gook, Park, Sang-Sik, Lee, Jong-Ho
Published in Journal of semiconductor technology and science (01.09.2012)
Published in Journal of semiconductor technology and science (01.09.2012)
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Journal Article
Analysis of Random Telegraph Noise and low frequency noise properties in 3-d stacked NAND flash memory with tube-type poly-Si channel structure
Min-Kyu Jeong, Sung-Min Joe, Chang-Su Seo, Kyung-Rok Han, Eunseok Choi, Sung-Kye Park, Jong-Ho Lee
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
Published in 2012 Symposium on VLSI Technology (VLSIT) (01.06.2012)
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Conference Proceeding
Effect of traps on transient bit-line current behavior in word-line stacked nand flash memory with poly-Si body
Ho-Jung Kang, Min-Kyu Jeong, Sung-Min Joe, Ji-Hyun Seo, Sung-Kye Park, Sung Hun Jin, Byung-Gook Park, Jong-Ho Lee
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding