Search Results - "Suk Ho Joo" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes

Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes

by Lee, Sang-Woo, Joo, Suk-Ho, Cho, Sung Lae, Son, Yoon-Ho, Lee, Kyu-Mann, Nam, Sang-Don, Park, Kun-Sang, Lee, Yong-Tak, Seo, Jung-Suk, Kim, Young-Dae, An, Hyeong-Geun, Kim, Hyoung-Joon, Jung, Yong-Ju, Heo, Jang-Eun, Lee, Moon-Sook, Park, Soon-Oh, Chung, U-In, Moon, Joo-Tae
Published in Japanese Journal of Applied Physics (01.01.2002)

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Journal Article

Electrical properties of sputtered (Ba, Sr)TiO3 thin films prepared by two-step deposition method

Electrical properties of sputtered (Ba, Sr)TiO3 thin films prepared by two-step deposition method

by BYOUNG TAEK LEE, WAN DON KIM, MOON YONG LEE, KI HOON LEE, HAN JIN LIM, CHANG SEOK KANG, HIDEKI, H, SUK HO JOO, HONG BAE PARK, CHA YOUNG YOO, SANG IN LEE
Published in Journal of electronic materials (01.04.1999)

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Journal Article

Highly Stable Etch Stopper Technology for 0.25 µm 1 Transistor 1 Capacitor (1T1C) 32 Mega-Bit Ferroelectric Random Access Memory (FRAM)

Highly Stable Etch Stopper Technology for 0.25 µm 1 Transistor 1 Capacitor (1T1C) 32 Mega-Bit Ferroelectric Random Access Memory (FRAM)

by Jang, Nak-Won, Song, Yoon-Jong, Joo, Suk-Ho, Lee, Kyu-Mann, Kim, Hyun-Ho, Joo, Heung-Jin, Park, Jung-Hoon, Lee, Sang-Woo, Lee, Sung-Yung, Kim, Kinam
Published in Japanese Journal of Applied Physics (30.04.2003)

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Journal Article

Novel capacitor process using diffusion barrier rounded by Si3N4 spacer for high density FRAM device

Novel capacitor process using diffusion barrier rounded by Si3N4 spacer for high density FRAM device

by Bon Jae Koo, Yoon Jong Song, Sung Yung Lee, Dong Jin Jung, Hyun Ho Kim, Suk Ho Joo, Yong Tak Lee, Kinam Kim
Published in IEEE electron device letters (01.06.2000)

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Journal Article

Novel capacitor process using diffusion barrier rounded by Si sub(3)N sub(4) spacer for high density FRAM device

Novel capacitor process using diffusion barrier rounded by Si sub(3)N sub(4) spacer for high density FRAM device

by Koo, Bon Jae, Song, Yoon Jong, Lee, Sung Yung, Jung, Dong Jin, Kim, Hyun Ho, Joo, Suk Ho, Lee, Yong Tak, Kim, Kinam
Published in IEEE electron device letters (01.01.2000)

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Journal Article

Highly Reliable 0.15 µm/14 F 2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO 3 Buffer Layer

Highly Reliable 0.15 µm/14 F 2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO 3 Buffer Layer

by Heo, Jang-Eun, Bae, Byoung-Jae, Yoo, Dong-Chul, Nam, Sang-Don, Lim, Ji-Eun, Im, Dong-Hyun, Joo, Suk-Ho, Jung, Yong-Ju, Choi, Suk-Hun, Park, Soon-Oh, Kim, Hee-Seok, Chung, U-In, Moon, Joo-Tae
Published in Japanese Journal of Applied Physics (01.04.2006)

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Journal Article

Novel capacitor process using diffusion barrier rounded by Si/sub 3/N/sub 4/ spacer for high density FRAM device

Novel capacitor process using diffusion barrier rounded by Si/sub 3/N/sub 4/ spacer for high density FRAM device

by Bon Jae Koo, Yoon Jong Song, Sung Yung Lee, Dong Jin Jung, Hyun Ho Kim, Suk Ho Joo, Yong Tak Lee, Kinam Kim
Published in IEEE electron device letters (01.06.2000)

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Journal Article

Novel capacitor process using diffusion barrier rounded by Si3 N4 spacer for high density FRAM device

Novel capacitor process using diffusion barrier rounded by Si3 N4 spacer for high density FRAM device

by Koo, Bon Jae, Song, Yoon Jong, Lee, Sung Yung, Jung, Dong Jin, Kim, Hyun Ho, Joo, Suk Ho, Lee, Yong Tak, Kim, Kinam
Published in IEEE electron device letters (01.06.2000)

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Journal Article

Novel capacitor process using diffusion barrier rounded by Si(3)N(4) spacer for high density FRAM device

Novel capacitor process using diffusion barrier rounded by Si(3)N(4) spacer for high density FRAM device

by Koo, Bon Jae, Song, Yoon Jong, Lee, Sung Yung, Jung, Dong Jin, Kim, Hyun Ho, Joo, Suk Ho, Lee, Yong Tak, Kim, Kinam
Published in IEEE electron device letters (01.06.2000)

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Journal Article

Enhanced Retention Characteristics of Pb(Zr, Ti)O 3 Capacitors by Ozone Treatment

Enhanced Retention Characteristics of Pb(Zr, Ti)O 3 Capacitors by Ozone Treatment

by Lee, Kyu-Mann, An, Hyeong-Geun, Lee, June-Key, Lee, Yong-Tak, Lee, Sang-Woo, Joo, Suk-Ho, Nam, Sang-Don, Park, Kun-Sang, Lee, Moon-Sook, Park, Soon-Oh, Kang, Ho-Kyu, Moon, Joo-Tae
Published in Japanese Journal of Applied Physics (01.08.2001)

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Journal Article

ENHANCED RETENTION CHARACTERISTICS OF Pb(Zr, Ti)O3 CAPACITORS BY OZONE TREATMENT

ENHANCED RETENTION CHARACTERISTICS OF Pb(Zr, Ti)O3 CAPACITORS BY OZONE TREATMENT

by Lee, K-M, An, H-G, Lee, J-K, Lee, Y-T, Lee, S-W, Joo, S-H
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 8, pp. 4979-4983. 2001 (2001)

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Journal Article

$Integration of Ferroelectric Random Access Memory Devices with Ir/IrO 2 /Pb(Zr x Ti 1- x )\barO 3 /Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr x Ti 1- x )O 3$

Integration of Ferroelectric Random Access Memory Devices with Ir/IrO 2 /Pb(Zr x Ti 1- x )\barO 3 /Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr x Ti 1- x )O 3

by Lee, Moon-Sook, Park, Kun-Sang, Nam, Sang-Don, Lee, Kyu-Mann, Seo, Jung-Suk, Joo, Suk-Ho, Lee, Sang-Woo, Lee, Yong-Tak, An, Hyeong-Geun, Kim, Hyoung-Joon, Cho, Sung-Lae, Son, Yoon-Ho, Kim, Young-Dae, Jung, Yong-Joo, Heo, Jang-Eun, Park, Soon-Oh, Chung, U-In, Moon, Joo-Tae
Published in Japanese Journal of Applied Physics (30.11.2002)

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Journal Article

Ferroelectric memory device and method of forming the same

Ferroelectric memory device and method of forming the same

by Joo, Suk-Ho
Year of Publication 03.05.2005

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Patent

Ferroelektrische Speichervorrichtung und Verfahren zum Ausbilden derselben

Ferroelektrische Speichervorrichtung und Verfahren zum Ausbilden derselben

by JOO, SUK-HO
Year of Publication 24.04.2008

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Patent

HIGHLY STABLE ETCH STOPPER TECHNOLOGY FOR 0.25 MU M 1 TRANSISTOR 1 CAPACITOR (1T1C) 32 MEGA-BIT FERROELECTRIC RANDOM ACCESS MEMORY (FRAM)

HIGHLY STABLE ETCH STOPPER TECHNOLOGY FOR 0.25 MU M 1 TRANSISTOR 1 CAPACITOR (1T1C) 32 MEGA-BIT FERROELECTRIC RANDOM ACCESS MEMORY (FRAM)

by Jang, N-W, Song, Y-J, Joo, S-H, Lee, K-M, Kim, H-H, Joo, H-J, Park, J-H
Published in Japanese Journal of Applied Physics, Part 1 (2003)

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Journal Article

Ferroelectric memory device and method of forming the same

Ferroelectric memory device and method of forming the same

by Joo, Suk-Ho
Year of Publication 22.07.2004

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Patent

Ferroelectric memory device

Ferroelectric memory device

by Joo, Suk-Ho
Year of Publication 06.04.2004

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Patent

Method of forming contact structure

Method of forming contact structure

by Byun, Kyung-Rae, Joo, Suk-Ho, Park, Min-Joon
Year of Publication 07.08.2012

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Patent

Electrical properties of sputtered (Ba, Sr)TiO sub(3) thin films prepared by two-step deposition method

Electrical properties of sputtered (Ba, Sr)TiO sub(3) thin films prepared by two-step deposition method

by Lee, Byoung Taek, Kim, Wan Don, Lee, Ki Hoon, Lim, Han Jin, Kang, Chang Seok, Hideki, Horii, Joo, Suk Ho, Park, Hong Bae, Yoo, Cha Young, Lee, Sang In, Lee, Moon Yong
Published in Journal of electronic materials (01.04.1999)

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Journal Article

Ferroelectric memory device and method of forming the same

Ferroelectric memory device and method of forming the same

by Joo, Suk-Ho
Year of Publication 13.03.2003

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Patent