Fast growth of n-type 4H-SiC bulk crystal by gas-source method
Hoshino, Norihiro, Kamata, Isaho, Tokuda, Yuichiro, Makino, Emi, Kanda, Takahiro, Sugiyama, Naohiro, Kuno, Hironari, Kojima, Jun, Tsuchida, Hidekazu
Published in Journal of crystal growth (15.11.2017)
Published in Journal of crystal growth (15.11.2017)
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Journal Article
Stable and high-speed SiC bulk growth without dendrites by the HTCVD method
Tokuda, Yuichiro, Makino, Emi, Sugiyama, Naohiro, Kamata, Isaho, Hoshino, Norihiro, Kojima, Jun, Hara, Kazukuni, Tsuchida, Hidekazu
Published in Journal of crystal growth (15.08.2016)
Published in Journal of crystal growth (15.08.2016)
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Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
Kojima, Jun, Tokuda, Yuichiro, Sugiyama, Naohiro, Hoshino, Norihiro, Makino, Emi, Kamata, Isaho, Tsuchida, Hidekazu
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Synthesis of multivalent sialyllactosamine-carrying glyco-nanoparticles with high affinity to the human influenza virus hemagglutinin
Ogata, Makoto, Umemura, Seiichiro, Sugiyama, Naohiro, Kuwano, Natsuki, Koizumi, Ami, Sawada, Tadakazu, Yanase, Michiyo, Takaha, Takeshi, Kadokawa, Jun-ichi, Usui, Taichi
Published in Carbohydrate polymers (20.11.2016)
Published in Carbohydrate polymers (20.11.2016)
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Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
Okumura, Hajime, Tsuchida, Hidekazu, Kamata, Isaho, Sugiyama, Naohiro, Kato, Tomohisa, Mitani, Takeshi
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Step structures and dislocations of SiC single crystals grown by modified Lely method
Sugiyama, Naohiro, Okamoto, Atsuto, Okumura, Kohei, Tani, Toshihiko, Kamiya, Nobuo
Published in Journal of crystal growth (01.07.1998)
Published in Journal of crystal growth (01.07.1998)
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