Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating
Sakuraba, Masao, Sugawara, Katsutoshi, Nosaka, Takayuki, Akima, Hisanao, Sato, Shigeo
Published in Science and technology of advanced materials (01.01.2017)
Published in Science and technology of advanced materials (01.01.2017)
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Journal Article
Impact of grounding the bottom oxide protection layer on the short-circuit ruggedness of 4H-SiC trench MOSFETs
Tanaka, Rina, Kagawa, Yasuhiro, Fujiwara, Nobuo, Sugawara, Katsutoshi, Fukui, Yutaka, Miura, Naruhisa, Imaizumi, Masayuki, Yamakawa, Satoshi
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
Published in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (01.06.2014)
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Conference Proceeding
Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET
Tanaka, Rina, Fujiwara, Nobuo, Nakata, Shuhei, Sugawara, Katsutoshi, Fukui, Yutaka, Yamakawa, Satoshi, Kagawa, Yasuhiro, Imaizumi, Masayuki, Miura, Naruhisa
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD
Sakuraba, Masao, Muto, Daisuke, Mori, Masaki, Sugawara, Katsutoshi, Murota, Junichi
Published in Thin solid films (03.11.2008)
Published in Thin solid films (03.11.2008)
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Conference Proceeding
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
SUGAWARA, Katsutoshi, KAWAHARA, Kotaro, IIJIMA, Akifumi, HINO, Shiro, FUJIYOSHI, Katsuhiro
Year of Publication 08.02.2024
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Year of Publication 08.02.2024
Patent
Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation
Suzuki, Hiroyoshi, Tanaka, Rina, Sugawara, Katsutoshi, Hatta, Hideyuki, Miura, Naruhisa, Miyata, Yusuke, Kagawa, Yasuhiro, Fukui, Yutaka, Taguchi, Kensuke, Tomohisa, Shingo, Koketsu, Hidenori
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation
Taguchi, Kensuke, Sugawara, Katsutoshi, Hatta, Hideyuki, Tanaka, Rina, Fukui, Yutaka, Koketsu, Hidenori, Kagawa, Yasuhiro, Miyata, Yusuke, Suzuki, Hiroyoshi, Tomohisa, Shingo, Miura, Naruhisa
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
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Journal Article
Improving Surge Current Capability of SBD-Embedded SiC-MOSFETs in Parallel Connection by Applying Bipolar Mode Activation Cells
Iijima, Akifumi, Kawahara, Koutarou, Sugawara, Katsutoshi, Hino, Shiro, Fujiyoshi, Katsuhiro, Oritsuki, Yasunori, Murakami, Takeshi, Takahashi, Tetsuo, Kagawa, Yasuhiro, Hironaka, Yoichi, Nishikawa, Kazuyasu
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
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Conference Proceeding
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
HATTA Hideyuki, MIYATA Yusuke, FUKUI Yutaka, TANAKA Rina, SUGAWARA Katsutoshi
Year of Publication 18.06.2020
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Year of Publication 18.06.2020
Patent
Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MOSFET with Bottom Oxide Protection Layer
Hatta, Hideyuki, Fujiwara, Nobuo, Konishi, Kazuya, Fukui, Yutaka, Sugawara, Katsutoshi, Adachi, Kohei, Sadamatsu, Koji, Yamakawa, Satoshi, Tomohisa, Shingo
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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