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Published in Japanese Journal of Applied Physics (2000)
Published in Japanese Journal of Applied Physics (2000)
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High-quality GaN films obtained by air-bridged lateral epitaxial growth
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Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air-bridged lateral epitaxial growth
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Published in Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 5B, pp. L445-L448. 2000 (2000)
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 39, no. 5B, pp. L445-L448. 2000 (2000)
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Year of Publication 31.07.2003
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Year of Publication 24.07.2003
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Year of Publication 07.06.2001
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METHOD OF FABRICATING NITRIDE SEMICONDUCTOR METHOD OF FABRICATING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE USING THE SAME
BAN YUZABURO, TSUJIMURA AYUMU, SUGAHARA GAKU, SHIMAMOTO TOSHITAKA, MIYANAGA RYOKO, OHNAKA KIYOSHI, ISHIBASHI AKIHIKO, OTSUKA NOBUYUKI, HARAFUJI KENJI, HASEGAWA YOSHIAKI
Year of Publication 04.07.2002
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Year of Publication 04.07.2002
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Room Temperature 339 nm Emission from Al 0.13 Ga 0.87 N/Al 0.10 Ga 0.90 N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
Otsuka, Nobuyuki, Tsujimura, Ayumu, Hasegawa, Yoshiaki, Sugahara, Gaku, Kume, Masahiro, Ban, Yuzaburoh
Published in Japanese Journal of Applied Physics (01.05.2000)
Published in Japanese Journal of Applied Physics (01.05.2000)
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Wafer reclamation method and wafer reclamation apparatus
HOUCHIN RYUZOU, HIROSHIMA MITSURU, SUGAHARA GAKU, OKITA SHOGO, SUZUKI HIROYUKI
Year of Publication 22.10.2013
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Year of Publication 22.10.2013
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