An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots
Akiyama, T., Ekawa, M., Sugawara, M., Kawaguchi, K., Hisao Sudo, Kuramata, A., Ebe, H., Arakawa, Y.
Published in IEEE photonics technology letters (01.08.2005)
Published in IEEE photonics technology letters (01.08.2005)
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Ground state lasing at 1.30 µm from InAs/GaAs quantum dot lasers grown by metal–organic chemical vapor deposition
Guimard, Denis, Ishida, Mitsuru, Bordel, Damien, Li, Lin, Nishioka, Masao, Tanaka, Yu, Ekawa, Mitsuru, Sudo, Hisao, Yamamoto, Tsuyoshi, Kondo, Hayato, Sugawara, Mitsuru, Arakawa, Yasuhiko
Published in Nanotechnology (12.03.2010)
Published in Nanotechnology (12.03.2010)
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Room-temperature electroluminescence from radial p-i-n InP/InAsP/InP nanowire heterostructures in the 1.5- mu m-wavelength region
Kawaguchi, Kenichi, Sudo, Hisao, Matsuda, Manabu, Ekawa, Mitsuru, Yamamoto, Tsuyoshi, Arakawa, Yasuhiko
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Facet degradation of AlGaInP visible semiconductor lasers with facet passivation
FUKUSHIMA, T, FURYA, A, KITO, Y, SUGANO, M, SUDO, H, TANAHASHI, T
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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Journal Article
Room-temperature electroluminescence from radial p-i-n InP/InAsP/InP nanowire heterostructures in the 1.5-µm-wavelength region
Kawaguchi, Kenichi, Sudo, Hisao, Matsuda, Manabu, Ekawa, Mitsuru, Yamamoto, Tsuyoshi, Arakawa, Yasuhiko
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Ground state lasing at 1.30 mu m from InAs/GaAs quantum dot lasers grown by metal--organic chemical vapor deposition
Guimard, Denis, Ishida, Mitsuru, Bordel, Damien, Li, Lin, Nishioka, Masao, Tanaka, Yu, Ekawa, Mitsuru, Sudo, Hisao, Yamamoto, Tsuyoshi, Kondo, Hayato, Sugawara, Mitsuru, Arakawa, Yasuhiko
Published in Nanotechnology (12.03.2010)
Published in Nanotechnology (12.03.2010)
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Journal Article
Catastrophic optical damage of algalnp visible laser diodes under high-power operation
Fukushima, Takehiro, Furuya, Akira, Kito, Yasuhiro, Sudo, Hisao, Sugano, Mami, Tanahashi, Toshiyuki
Published in Electronics & communications in Japan. Part 2, Electronics (01.07.1995)
Published in Electronics & communications in Japan. Part 2, Electronics (01.07.1995)
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Journal Article
Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition
Guimard, Denis, Ishida, Mitsuru, Bordel, Damien, Li, Lin, Nishioka, Masao, Tanaka, Yu, Ekawa, Mitsuru, Sudo, Hisao, Yamamoto, Tsuyoshi, Kondo, Hayato, Sugawara, Mitsuru, Arakawa, Yasuhiko
Published in Nanotechnology (12.03.2010)
Published in Nanotechnology (12.03.2010)
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Journal Article
Stability in single longitudinal mode operation in GaInAsP/InP phase-adjusted DFB lasers
Soda, H., Kotaki, Y., Sudo, H., Ishikawa, H., Yamakoshi, S., Imai, H.
Published in IEEE journal of quantum electronics (01.06.1987)
Published in IEEE journal of quantum electronics (01.06.1987)
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Journal Article
Temperature Dependence of Gain Characteristics in P-Doped 1.3-μm Quantum Dot Lasers
Yukutake, T., Ishida, M., Hatori, N., Sudo, H., Yamamoto, T., Nakata, Y., Ebe, H., Sugawara, M., Arakawa, Y.
Published in 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials (01.05.2007)
Published in 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials (01.05.2007)
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