Tunable Reverse-Biased Graphene/Silicon Heterojunction Schottky Diode Sensor
Singh, Amol, Uddin, Md. Ahsan, Sudarshan, Tangali, Koley, Goutam
Published in Small (Weinheim an der Bergstrasse, Germany) (01.04.2014)
Published in Small (Weinheim an der Bergstrasse, Germany) (01.04.2014)
Get full text
Journal Article
Functionalized graphene/silicon chemi-diode H 2 sensor with tunable sensitivity
Uddin, Md Ahsan, Singh, Amol Kumar, Sudarshan, Tangali S, Koley, Goutam
Published in Nanotechnology (28.03.2014)
Published in Nanotechnology (28.03.2014)
Get full text
Journal Article
Large barrier, highly uniform and reproducible Ni-Si/4H-SiC forward Schottky diode characteristics: testing the limits of Tung's model
Omar, Sabih U, Sudarshan, Tangali S, Rana, Tawhid A, Song, Haizheng, Chandrashekhar, M V S
Published in Journal of physics. D, Applied physics (23.07.2014)
Published in Journal of physics. D, Applied physics (23.07.2014)
Get full text
Journal Article
Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors
Mandal, K. C., Krishna, R. M., Muzykov, P. G., Das, S., Sudarshan, T. S.
Published in IEEE transactions on nuclear science (01.08.2011)
Published in IEEE transactions on nuclear science (01.08.2011)
Get full text
Journal Article
Micro/nanoscale mechanical and tribological characterization of SiC for orthopedic applications
Li, Xiaodong, Wang, Xinnan, Bondokov, Robert, Morris, Julie, An, Yuehuei H., Sudarshan, Tangali S.
Published in Journal of biomedical materials research. Part B, Applied biomaterials (15.02.2005)
Published in Journal of biomedical materials research. Part B, Applied biomaterials (15.02.2005)
Get full text
Journal Article
Layered GaTe Crystals for Radiation Detectors
Mandal, K. C., Krishna, R. M., Hayes, T. C., Muzykov, P. G., Das, S., Sudarshan, T. S., Shuguo Ma
Published in IEEE transactions on nuclear science (01.08.2011)
Published in IEEE transactions on nuclear science (01.08.2011)
Get full text
Journal Article
Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors
Muzykov, Peter G., Kennedy, Robert M., Zhang, Qingchun (Jon), Capell, Craig, Burk, Al, Agarwal, Anant, Sudarshan, Tangali S.
Published in Microelectronics and reliability (01.01.2009)
Published in Microelectronics and reliability (01.01.2009)
Get full text
Journal Article
Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications
Feng Zhao, Islam, M.M., Muzykov, P., Bolotnikov, A., Sudarshan, T.S.
Published in IEEE electron device letters (01.11.2009)
Published in IEEE electron device letters (01.11.2009)
Get full text
Journal Article
Site Specific TEM Specimen Preparation for Characterization of Extended Defects in 4H-SiC Epilayers
Abadier, Mina, Myers-Ward, Rachael L., Song, Haizheng, Kurt Gaskill, D., Eddy, Chip R., Sudarshan, Tangali S., Picard, Yoosuf N., Skowronski, Marek
Published in Microscopy and microanalysis (01.08.2014)
Published in Microscopy and microanalysis (01.08.2014)
Get full text
Journal Article
Design rules for field plate edge termination in SiC Schottky diodes
Tarplee, M.C., Madangarli, V.P., Quinchun Zhang, Sudarshan, T.S.
Published in IEEE transactions on electron devices (01.12.2001)
Published in IEEE transactions on electron devices (01.12.2001)
Get full text
Journal Article
Nondestructive defect characterization of SiC substrates and epilayers
Get full text
Conference Proceeding
Journal Article