Increasing peak detectivity (D) of In0.5Ga0.5As/GaAs quantum dot infrared photodetectors by up to two orders with high-energy proton implantation
Upadhyay, S, Mandal, A, Ghadi, H, Pal, D, Basu, A, Subrahmanyam, N.B.V, Singh, P, Chakrabarti, S
Published in Electronics letters (08.01.2016)
Published in Electronics letters (08.01.2016)
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Journal Article
Defect annihilation-mediated enhanced activation energy of GaAs 0.979 N 0.021 -capped InAs/GaAs quantum dots by H − ion implantation
Biswas, Mahitosh, Singh, Sandeep, Balgarkashi, Akshay, Makkar, Roshan L., Bhatnagar, Anuj, Subrahmanyam, N.B.V., Gupta, Shrikrishna K., Bhagwat, Pramod, Chakrabarti, Subhananda
Published in Thin solid films (01.10.2017)
Published in Thin solid films (01.10.2017)
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Journal Article
Defect annihilation-mediated enhanced activation energy of GaAs0.979N0.021-capped InAs/GaAs quantum dots by H− ion implantation
Biswas, Mahitosh, Singh, Sandeep, Balgarkashi, Akshay, Makkar, Roshan L., Bhatnagar, Anuj, Subrahmanyam, N.B.V., Gupta, Shrikrishna K., Bhagwat, Pramod, Chakrabarti, Subhananda
Published in Thin solid films (01.10.2017)
Published in Thin solid films (01.10.2017)
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Journal Article
Increasing peak detectivity (D) of In 0.5 Ga 0.5 As/GaAs quantum dot infrared photodetectors by up to two orders with high‐energy proton implantation
Upadhyay, S., Mandal, A., Ghadi, H., Pal, D., Basu, A., Subrahmanyam, N.B.V., Singh, P., Chakrabarti, S.
Published in Electronics letters (01.01.2016)
Published in Electronics letters (01.01.2016)
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Journal Article
Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ions
Upadhyay, S., Mandal, A., Agarwal, A., Ghadi, H., Goma Kumari, K.C., Basu, A., Subrahmanyam, N.B.V., Singh, P., Chakrabarti, S.
Published in Materials research bulletin (01.12.2016)
Published in Materials research bulletin (01.12.2016)
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Journal Article
Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layer
Upadhyay, S., Mandal, A., Ghadi, H., Pal, D., Basu, A., Agarwal, A., Subrahmanyam, N.B.V., Singh, P., Chakrabarti, S.
Published in Journal of luminescence (01.05.2015)
Published in Journal of luminescence (01.05.2015)
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Journal Article
Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H−) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectors
Mandal, A., Ghadi, H., Mathur, K.L., Basu, A., Subrahmanyam, N.B.V., Singh, P., Chakrabarti, S.
Published in Materials research bulletin (01.08.2013)
Published in Materials research bulletin (01.08.2013)
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Journal Article