Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression
Kim, Donguk, Kim, Je-Hyuk, Choi, Woo Sik, Yang, Tae Jun, Jang, Jun Tae, Belmonte, Attilio, Rassoul, Nouredine, Subhechha, Subhali, Delhougne, Romain, Kar, Gouri Sankar, Lee, Wonsok, Cho, Min Hee, Ha, Daewon, Kim, Dae Hwan
Published in Scientific reports (12.11.2022)
Published in Scientific reports (12.11.2022)
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Journal Article
Study of Contact Resistance Components in Short-Channel Indium-Gallium-Zinc-Oxide Transistor
Tang, Hongwei, Dekkers, Harold, Rassoul, Nouredine, Sutar, Surajit, Subhechha, Subhali, Afanas'ev, Valeri, Van Houdt, Jan, Delhougne, Romain, Kar, Gouri Sankar, Belmonte, Attilio
Published in IEEE transactions on electron devices (01.01.2024)
Published in IEEE transactions on electron devices (01.01.2024)
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Journal Article
Write-Verify Scheme for IGZO DRAM in Analog in-Memory Computing
Caselli, Michele, Subhechha, Subhali, Debacker, Peter, Mallik, Arindam, Verkest, Diederik
Published in 2022 IEEE International Symposium on Circuits and Systems (ISCAS) (28.05.2022)
Published in 2022 IEEE International Symposium on Circuits and Systems (ISCAS) (28.05.2022)
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Conference Proceeding
The Impact of IGZO Channel Composition on DRAM Transistor Performance
Kruv, Anastasiia, Van Setten, M. J., Dekkers, Hendrik F. W., Lorant, Christophe, Verreck, Devin, Smets, Quentin, Venkataramana, Bhuvaneshwari Yengula, Belmonte, Attilio, Subhechha, Subhali, Chasin, Adrian Vaisman, Delhougne, Romain, Kar, Gouri Sankar
Published in IEEE transactions on electron devices (01.09.2023)
Published in IEEE transactions on electron devices (01.09.2023)
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Journal Article
Oxygen Defect Stability in Amorphous, C‑Axis Aligned, and Spinel IGZO
van Setten, Michiel J, Dekkers, Harold F. W, Kljucar, Luka, Mitard, Jerome, Pashartis, Christopher, Subhechha, Subhali, Rassoul, Nouredine, Delhougne, Romain, Kar, Gouri S, Pourtois, Geoffrey
Published in ACS applied electronic materials (28.09.2021)
Published in ACS applied electronic materials (28.09.2021)
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Journal Article
Deposition, Characterization, and Performance of Spinel InGaZnO 4
Dekkers, Hendrik F. W., van Setten, Michiel J., Belmonte, Attilio, Chasin, Adrian V., Subhechha, Subhali, Rassoul, Nouredine, Glushkova, Anastasia V., Delhougne, Romain, Kar, Gouri Sankar
Published in ACS applied electronic materials (22.03.2022)
Published in ACS applied electronic materials (22.03.2022)
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Journal Article
Deposition, Characterization, and Performance of Spinel InGaZnO4
Dekkers, Hendrik F. W, van Setten, Michiel J, Belmonte, Attilio, Chasin, Adrian V, Subhechha, Subhali, Rassoul, Nouredine, Glushkova, Anastasia V, Delhougne, Romain, Kar, Gouri Sankar
Published in ACS applied electronic materials (22.03.2022)
Published in ACS applied electronic materials (22.03.2022)
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Journal Article
Kinetic defect distribution approach for modeling the transient, endurance and retention of a-VMCO RRAM
Subhechha, Subhali, Degraeve, Robin, Roussel, Philippe, Goux, Ludovic, Clima, Sergiu, De Meyer, Kristin, Van Houdt, Jan, Kar, Gouri Sankar
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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Conference Proceeding
Impact of the electronic band structure on the reliability of triple layer a-VMCO devices
Belmonte, Attilio, Govoreanu, Bogdan, Subhechha, Subhali, Di Piazza, Luca, Goux, Ludovic, Kar, Gouri Sankar
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
Published in 2017 IEEE International Reliability Physics Symposium (IRPS) (01.04.2017)
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Conference Proceeding
Extensive reliability investigation of a-VMCO nonfilamentary RRAM: Relaxation, retention and key differences to filamentary switching
Subhechha, Subhali, Govoreanu, Bogdan, Yangyin Chen, Clima, Sergiu, De Meyer, Kristin, Van Houdt, Jan, Jurczak, Malgorzata
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
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Conference Proceeding
Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays
Subhechha, Subhali, Cosemans, Stefan, Belmonte, Attilio, Rassoul, Nouredine, Sharifi, Shamin Houshmand, Debacker, Peter, Verkest, Diederik, Delhougne, Romain, Kar, Gouri Sankar
Published in 2023 IEEE International Memory Workshop (IMW) (01.05.2023)
Published in 2023 IEEE International Memory Workshop (IMW) (01.05.2023)
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Conference Proceeding
A New Surface Potential and Physics Based Compact Model for a-IGZO TFTs at Multinanoscale for High Retention and Low-Power DRAM Application
Guo, Jingrui, Han, Kaizhen, Subhechha, Subhali, Duan, Xinlv, Chen, Qian, Geng, Di, Huang, Shijie, Xu, Lihua, An, Junjie, Kar, Gouri Sankar, Gong, Xiao, Wang, Lingfei, Li, Ling, Liu, Ming
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Conference Proceeding
Experimental Determination of the Driving Force for Switching in TiN/a-Si/TiOx/TiN RRAM Devices
Subhechha, Subhali, Degraeve, Robin, Roussel, Philippe, Goux, Ludovic, De Meyer, Kristin, Van Houdt, Jan, Kar, Gouri Sankar
Published in 2019 IEEE 11th International Memory Workshop (IMW) (01.05.2019)
Published in 2019 IEEE 11th International Memory Workshop (IMW) (01.05.2019)
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Conference Proceeding
Understanding Endurance in TiN/a-Si/TiOx/TiN RRAM Devices
Subhechha, Subhali, Degraeve, Robin, Belmonte, Attilio, Goux, Ludovic, Luca Donadio, Gabriele, Roussel, Philippe, De Meyer, Kristin, Van Houdt, Jan, Kar, Gouri Sankar
Published in 2018 IEEE International Memory Workshop (IMW) (01.05.2018)
Published in 2018 IEEE International Memory Workshop (IMW) (01.05.2018)
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Conference Proceeding