Modeling of uniform switching RRAM devices and impact of critical defects
Subhechha, S., Degraeve, R., Roussel, P., Goux, L., Clima, S., De Meyer, K., Van Houdt, J., Kar, G.S.
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
Get full text
Journal Article
A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Govoreanu, B., Crotti, D., Subhechha, S., Zhang, L., Chen, Y. Y., Clima, S., Paraschiv, V., Hody, H., Adelmann, C., Popovici, M., Richard, O., Jurczak, M.
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Get full text
Conference Proceeding
Journal Article
Understanding and modelling the PBTI reliability of thin-film IGZO transistors
Chasin, A., Franco, J., Triantopoulos, K., Dekkers, H., Rassoul, N., Belmonte, A., Smets, Q., Subhechha, S., Claes, D., van Setten, M. J., Mitard, J., Delhougne, R., Afanas'ev, V., Kaczer, B., Kar, G. S.
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Get full text
Conference Proceeding
A Correlative Analysis Flow for Electrical and Structural Characterization of IGZO Transistors
Magnarin, L., Agati, M., Belmonte, A., Subhechha, S., Rassoul, N., Drijbooms, C., Dekkers, H., Celano, U.
Published in 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (18.07.2022)
Published in 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (18.07.2022)
Get full text
Conference Proceeding
Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy
Wu, Z., Chasin, A., Franco, J., Subhechha, S., Dekkers, H., Bhuvaneshwari, Y.V., Belmonte, A., Rassoul, N., van Setten, M.J., Afanas'Ev, V., Delhougne, R., Kaczer, B., Kar, G.S.
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Published in 2022 International Electron Devices Meeting (IEDM) (03.12.2022)
Get full text
Conference Proceeding
Lowest IOFF −21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT
Belmonte, A., Kundu, S., Subhechha, S., Chasin, A., Rassoul, N., Dekkers, H., Puliyalil, H., Seidel, F., Carolan, P., Delhougne, R., Kar, G. S.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Get full text
Conference Proceeding
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm
Subhechha, S., Rassoul, N., Belmonte, A., Hody, H., Dekkers, H., van Setten, M. J., Chasin, A., Sharifi, S.H., Sutar, S., Magnarin, L., Celano, U., Puliyalil, H., Kundu, S., Pak, M., Teugels, L., Tsvetanova, D., Bazzazian, N., Vandersmissen, K., Biasotto, C., Batuk, D., Geypen, J., Heijlen, J., Delhougne, R., Kar, G. S.
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
Published in 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (12.06.2022)
Get full text
Conference Proceeding
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control
Subhechha, S., Rassoul, N., Belmonte, A., Hody, H., Dekkers, H., van Setten, M. J., Chasin, A., Sharifi, S.H., Banerjee, K., Puliyalil, H., Kundu, S., Pak, M., Tsvetanova, D., Bazzazian, N., Vandersmissen, K., Batuk, D., Geypen, J., Heijlen, J., Delhougne, R., Kar, G. S.
Published in 2022 International Conference on IC Design and Technology (ICICDT) (21.09.2022)
Published in 2022 International Conference on IC Design and Technology (ICICDT) (21.09.2022)
Get full text
Conference Proceeding
First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices
Subhechha, S., Rassoul, N., Belmonte, A., Delhougne, R., Banerjee, K., Donadio, G. L., Dekkers, H., van Setten, M. J., Puliyalil, H., Mao, M., Kundu, S., Pak, M., Teugels, L., Tsvetanova, D., Bazzazian, N., Klijs, L., Hody, H., Chasin, A., Heijlen, J., Goux, L., Kar, G. S.
Published in 2021 Symposium on VLSI Technology (13.06.2021)
Get full text
Published in 2021 Symposium on VLSI Technology (13.06.2021)
Conference Proceeding
Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
Belmonte, A., Oh, H., Rassoul, N., Donadio, G.L., Mitard, J., Dekkers, H., Delhougne, R., Subhechha, S., Chasin, A., van Setten, M. J., Kljucar, L., Mao, M., Puliyalil, H., Pak, M., Teugels, L., Tsvetanova, D., Banerjee, K., Souriau, L., Tokei, Z., Goux, L., Kar, G. S.
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Get full text
Conference Proceeding
Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm
Belmonte, A., Oh, H., Subhechha, S., Rassoul, N., Hody, H., Dekkers, H., Delhougne, R., Ricotti, L., Banerjee, K., Chasin, A., van Setten, M. J., Puliyalil, H., Pak, M., Teugels, L., Tsvetanova, D., Vandersmissen, K., Kundu, S., Heijlen, J., Batuk, D., Geypen, J., Goux, L., Kar, G. S.
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Get full text
Conference Proceeding
Degradation mapping and impact of device dimension on IGZO TFTs BTI
Rinaudo, P., Chasin, A., Franco, J., Wu, Z., Subhechha, S., Arutchelvan, G., Eneman, G., Ramana, B. Y. V., Rassoul, N., Delhougne, R., Kaczer, B., Wolf, I. De, Kar, G.S.
Published in IEEE transactions on device and materials reliability (01.09.2023)
Published in IEEE transactions on device and materials reliability (01.09.2023)
Get full text
Magazine Article
Non-filamentary (VMCO) memory: A two-and three-dimensional study on switching and failure modes
Celano, U., Gastaldi, C., Subhechha, S., Govoreanu, B., Donadio, G., Franquet, A., Ahmad, T., Detavernier, C., Richard, O., Bender, H., Goux, L., Kar, G. S., van der Heide, P., Vandervorst, W.
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Get full text
Conference Proceeding