InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths
Il'inskaya, N.D, Karandashev, S.A, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A
Published in Technical physics (01.02.2018)
Published in Technical physics (01.02.2018)
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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction
Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.01.2018)
Published in Infrared physics & technology (01.01.2018)
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Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237]
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.11.2015)
Published in Infrared physics & technology (01.11.2015)
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Journal Article
InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.11.2015)
Published in Infrared physics & technology (01.11.2015)
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Journal Article
Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure
Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
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Journal Article
P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.09.2016)
Published in Infrared physics & technology (01.09.2016)
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Photoacoustic gas detection using a cantilever microphone and III–V mid-IR LEDs
Kuusela, T., Peura, J., Matveev, B.A., Remennyy, M.A., Stus’, N.M.
Published in Vibrational spectroscopy (10.11.2009)
Published in Vibrational spectroscopy (10.11.2009)
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Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
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Journal Article
Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
P-InAsSbP/[n.sup.0]-InAs/[n.sup.+]-InAs photodiodes for operation at moderate cooling
Brunkov, P.N, Il'inskaya, N.D, Karandashev, S.A, Latnikova, N.M, Lavrov, A.A, Matveev, B.A, Petrov, A.S, Remennyi, M.A, Sevostyanov, E.N, Stus, N.M
Published in Semiconductors (Woodbury, N.Y.) (01.10.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2014)
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Nonuniformity in the spatial distribution of negative luminescence in InAsSb
Karandashev, S.A, Matveev, B.A, Mzhelskii, I.V, Polovinkin, V.G, Remennyi, M.A, Rybalchenko, A. Yu, Stus, N.M
Published in Semiconductors (Woodbury, N.Y.) (01.02.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2012)
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Current-voltage characteristics and photocurrent collection in radially symmetric front-surface-illuminated InAsSb(P) photodiodes
Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.
Published in Technical physics (01.11.2014)
Published in Technical physics (01.11.2014)
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Journal Article
Cooled P-InAsSbP/n-InAs/N-InAsSbP double heterostructure photodiodes
Brunkov, P.N., Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2014)
Published in Infrared physics & technology (01.05.2014)
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Spatial nonuniformity of current flow and its consideration in determination of characteristics of surface illuminated InAsSbP/InAs-based photodiodes
Zotova, N. V., Karandashev, S. A., Matveev, B. A., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2011)
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Front surface illuminated InAsSb photodiodes (long-wavelength cutoff λ0.1 = 4.5 μm) operating at temperatures of 25–80°C
Il’inskaya, N. D., Zakgeim, A. L., Karandashev, S. A., Matveev, B. A., Ratushnyi, V. I., Remennyy, M. A., Rybal’chenko, A. Yu, Stus’, N. M., Chernyakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2012)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2012)
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Journal Article
Mid-infrared (3-5 μm) LEDs as sources for gas and liquid sensors
Matveev, B.A., Gavrilov, G.A., Evstropov, V.V., Zotova, N.V., Karandashov, S.A., Sotnikova, G.Yu, Stus', N.M., Talalakin, G.N., Malinen, J.
Published in Sensors and actuators. B, Chemical (01.03.1997)
Published in Sensors and actuators. B, Chemical (01.03.1997)
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Midwave (3–4 μm) InAsSbP/InGaAsSb infrared diode lasers as a source for gas sensors
Aidaraliev, M., Zotova, N.V., Karandashov, S.A., Matveev, B.A., Stus', N.M., Talalakin, G.N.
Published in Infrared physics & technology (01.02.1996)
Published in Infrared physics & technology (01.02.1996)
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