Die richtig Wahl des Implantmaterials
Gross, Christian, Nelson, Katja, Fretwurst, Tobias, Stricker, Andreas
Published in Der junge Zahnarzt (2023)
Published in Der junge Zahnarzt (2023)
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Journal Article
Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility
Reggiani, Susanna, Valdinoci, Marina, Colalongo, Luigi, Rudan, Massimo, Baccarani, Giorgio, Stricker, Andreas D, Illien, Fridolin, Felber, Norbert, Fichtner, Wolfgang, Zullino, Lucia
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
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Journal Article
Design and optimization of a 200 GHz SiGe HBT collector profile by TCAD
Stricker, Andreas D., Johnson, Jeffrey B., Freeman, Greg, Rieh, Jae-Sung
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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Journal Article
Conference Proceeding
Demonstration of Error-Free 32-Gb/s Operation From Monolithic CMOS Nanophotonic Transmitters
Gill, Douglas M., Chi Xiong, Proesel, Jonathan E., Rosenberg, Jessie C., Orcutt, Jason, Khater, Marwan, Ellis-Monaghan, John, Stricker, Andreas, Kiewra, Edward, Martin, Yves, Vlasov, Yurii, Haensch, Wilfried, Green, William M. J.
Published in IEEE photonics technology letters (01.07.2016)
Published in IEEE photonics technology letters (01.07.2016)
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Journal Article
Characterization and optimization of a bipolar ESD-device by measurements and simulations
Stricker, Andreas D., Mettler, Stephan, Wolf, Heinrich, Mergens, Markus, Wilkening, Wolfgang, Gieser, Horst, Fichtner, Wolfgang
Published in Microelectronics and reliability (01.11.1999)
Published in Microelectronics and reliability (01.11.1999)
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Journal Article
Analysis of lateral DMOS power devices under ESD stress conditions
Mergens, M.P.J., Wilkening, W., Mettler, S., Wolf, H., Stricker, A., Fichtner, W.
Published in IEEE transactions on electron devices (01.11.2000)
Published in IEEE transactions on electron devices (01.11.2000)
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Journal Article
Transistor design and application considerations for >200-GHz SiGe HBTs
Freeman, G., Jagannathan, B., Shwu-Jen Jeng, Jae-Sung Rieh, Stricker, A.D., Ahlgren, D.C., Subbanna, S.
Published in IEEE transactions on electron devices (01.03.2003)
Published in IEEE transactions on electron devices (01.03.2003)
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Journal Article
BIPOLAR TRANSISTOR STRUCTURE AND METHOD OF FORMING THE STRUCTURE
STRICKER ANDREAS D, DAHLSTROM MATTIAS E, GRAY PETER B, HERRIN RUSSELL T, HARAME DAVID L, CAMILLO CASTILLO RENATA, JOSEPH ALVIN J
Year of Publication 17.01.2013
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Year of Publication 17.01.2013
Patent
PHOTODETECTORS AND ABSORBERS WITH SLANTED LIGHT INCIDENCE
Bian, Yusheng, Aboketaf, Abdelsalam, Stricker, Andreas D, Chowdhury, Asif J
Year of Publication 27.10.2022
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Year of Publication 27.10.2022
Patent
Technology Computer-Aided Design (TCAD) Feasibility Study of Scaling SiGe HBTs
Camillo-Castillo, Renata, Stricker, Andreas, Johnson, Jeffrey B., Appaswarmy, Aravind, Malladi, Ramana, Joseph, Alvin, Harame, D.
Published in ECS transactions (01.01.2010)
Published in ECS transactions (01.01.2010)
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Journal Article
Reverse active mode current characteristics of SiGe HBTs
Jae-Sung Rieh, Jin Cai, Tak Ning, Stricker, A., Freeman, G.
Published in IEEE transactions on electron devices (01.06.2005)
Published in IEEE transactions on electron devices (01.06.2005)
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Journal Article