Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs
Lebedev, A.A., Kozlovski, V.V., Levinshtein, M.E., Ivanov, A.E., Strel'chuk, A.M., Zubov, A.V., Fursin, Leonid
Published in Radiation physics and chemistry (Oxford, England : 1993) (01.12.2020)
Published in Radiation physics and chemistry (Oxford, England : 1993) (01.12.2020)
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Journal Article
Optical and electrical properties of 4H-SiC irradiated with Xe ions
Kalinina, E. V., Chuchvaga, N. A., Bogdanova, E. V., Strel’chuk, A. M., Shustov, D. B., Zamoryanskaya, M. V., Skuratov, V. A.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2014)
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Journal Article
Radiation hardness of n-GaN schottky diodes
Lebedev, A. A., Belov, S. V., Mynbaeva, M. G., Strel’chuk, A. M., Bogdanova, E. V., Makarov, Yu. N., Usikov, A. S., Kurin, S. Yu, Barash, I. S., Roenkov, A. D., Kozlovski, V. V.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2015)
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Journal Article
Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation
Lebedev, A. A., Agrinskaya, N. V., Lebedev, S. P., Mynbaeva, M. G., Petrov, V. N., Smirnov, A. N., Strel’chuk, A. M., Titkov, A. N., Shamshur, D. V.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2011)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2011)
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Journal Article
Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates
Lebedev, A. A., Strel’chuk, A. M., Shamshur, D. V., Oganesyan, G. A., Lebedev, S. P., Mynbaeva, M. G., Sadokhin, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2010)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2010)
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Journal Article
Ideal 4H-SiC pn junction and its characteristic shunt
Strel'chuk, A.M., Savkina, N.S.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.03.2001)
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Journal Article
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Savkina, N.S., Lebedev, A.A., Davydov, D.V., Strel'chuk, A.M., Tregubova, A.S., Raynaud, C., Chante, J.-P., Locatelli, M.-L., Planson, D., Milan, J., Godignon, P., Campos, F.J., Mestres, N., Pascual, J., Brezeanu, G., Badila, M.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (07.08.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (07.08.2000)
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Journal Article
Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions
Kalinina, E. V., Kholuyanov, G. F., Onushkin, G. A., Davydov, D. V., Strel’chuk, A. M., Konstantinov, A. O., Hallén, A., Nikiforov, A. Yu, Skuratov, V. A., Havancsak, K.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2004)
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Journal Article
Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC
Strel'chuk, A.M., Savkina, N.S., Kuznetsov, A.N., Lebedev, A.A., Tregubova, A.S.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (30.04.2002)
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Journal Article
Silicon carbide transistor structures as detectors of weakly ionizing radiation
Strokan, N. B., Ivanov, A. M., Boiko, M. E., Savkina, N. S., Strel’chuk, A. M., Lebedev, A. A., Yakimova, R.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2003)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2003)
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Journal Article
Investigation of n-GaN/p-SiC/n-SiC heterostructures
Lebedev, A.A., Ledyaev, O.Yu, Strel’chuk, A.M., Kuznetsov, A.N., Nikolaev, A.E., Zubrilov, A.S., Volkova, A.A.
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Journal Article
High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V
Andreev, A.N., Anikin, M.M., Zelenin, V.V., Ivanov, P.A., Lebedev, A.A., Rastegaeva, M.G., Savkina, N.S., Strel'chuk, A.M., Syrkin, A.L., Chelnokov, V.E.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1995)
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Journal Article
Electrical characteristics of p-3C–SiC/n-6H–SiC heterojunctions grown by sublimation epitaxy on 6H–SiC substrates
Lebedev, A.A., Strel’chuk, A.M., Davydov, D.V., Savkina, N.S., Tregubova, A.S., Kuznetsov, A.N., Solov’ev, V.A., Poletaev, N.K.
Published in Applied surface science (12.12.2001)
Published in Applied surface science (12.12.2001)
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