Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structures
Krieg, Linus, Meierhofer, Florian, Gorny, Sascha, Leis, Stefan, Splith, Daniel, Zhang, Zhipeng, von Wenckstern, Holger, Grundmann, Marius, Wang, Xiaoxue, Hartmann, Jana, Margenfeld, Christoph, Manglano Clavero, Irene, Avramescu, Adrian, Schimpke, Tilman, Scholz, Dominik, Lugauer, Hans-Jürgen, Strassburg, Martin, Jungclaus, Jörgen, Bornemann, Steffen, Spende, Hendrik, Waag, Andreas, Gleason, Karen K., Voss, Tobias
Published in Nature communications (09.10.2020)
Published in Nature communications (09.10.2020)
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Growth mechanisms of GaN microrods for 3D core-shell LEDs: The influence of silane flow
Hartmann, Jana, Wang, Xue, Schuhmann, Henning, Dziony, Wanja, Caccamo, Lorenzo, Ledig, Johannes, Mohajerani, Matin Sadat, Schimpke, Tilman, Bähr, Markus, Lilienkamp, Gerhard, Daum, Winfried, Seibt, Michael, Straßburg, Martin, Wehmann, Hergo-Heinrich, Waag, Andreas
Published in Physica status solidi. A, Applications and materials science (01.12.2015)
Published in Physica status solidi. A, Applications and materials science (01.12.2015)
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The nanorod approach: GaN NanoLEDs for solid state lighting
Waag, Andreas, Wang, Xue, Fündling, Sönke, Ledig, Johannes, Erenburg, Milena, Neumann, Richard, Al Suleiman, Mohamed, Merzsch, Stephan, Wei, Jiandong, Li, Shunfeng, Wehmann, Hergo H., Bergbauer, Werner, Straßburg, Martin, Trampert, Achim, Jahn, Uwe, Riechert, Henning
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
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Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
Nippert, Felix, Karpov, Sergey, Pietzonka, Ines, Galler, Bastian, Wilm, Alexander, Kure, Thomas, Nenstiel, Christian, Callsen, Gordon, Straßburg, Martin, Lugauer, Hans-Jürgen, Hoffmann, Axel
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures
Wang, Xue, Li, Shunfeng, Mohajerani, Matin Sadat, Ledig, Johannes, Wehmann, Hergo-Heinrich, Mandl, Martin, Strassburg, Martin, Steegmüller, Ulrich, Jahn, Uwe, Lähnemann, Jonas, Riechert, Henning, Griffiths, Ian, Cherns, David, Waag, Andreas
Published in Crystal growth & design (07.08.2013)
Published in Crystal growth & design (07.08.2013)
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Core-shell InGaN nanorod light emitting diodes: Electronic and optical device properties
Kölper, Christopher, Sabathil, Matthias, Römer, Friedhard, Mandl, Martin, Strassburg, Martin, Witzigmann, Bernd
Published in Physica status solidi. A, Applications and materials science (01.11.2012)
Published in Physica status solidi. A, Applications and materials science (01.11.2012)
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High Aspect Ratio GaN Fin Microstructures with Nonpolar Sidewalls by Continuous Mode Metalorganic Vapor Phase Epitaxy
Hartmann, Jana, Steib, Frederik, Zhou, Hao, Ledig, Johannes, Fündling, Sönke, Albrecht, Friederike, Schimpke, Tilman, Avramescu, Adrian, Varghese, Tansen, Wehmann, Hergo-Heinrich, Straßburg, Martin, Lugauer, Hans-Jürgen, Waag, Andreas
Published in Crystal growth & design (02.03.2016)
Published in Crystal growth & design (02.03.2016)
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Journal Article
Phosphor-converted white light from blue-emitting InGaN microrod LEDs
Schimpke, Tilman, Mandl, Martin, Stoll, Ion, Pohl-Klein, Bianca, Bichler, Daniel, Zwaschka, Franz, Strube-Knyrim, Johanna, Huckenbeck, Barbara, Max, Benjamin, Müller, Marcus, Veit, Peter, Bertram, Frank, Christen, Jürgen, Hartmann, Jana, Waag, Andreas, Lugauer, Hans-Jürgen, Strassburg, Martin
Published in Physica status solidi. A, Applications and materials science (01.06.2016)
Published in Physica status solidi. A, Applications and materials science (01.06.2016)
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Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls
Hartmann, Jana, Steib, Frederik, Zhou, Hao, Ledig, Johannes, Nicolai, Lars, Fündling, Sönke, Schimpke, Tilman, Avramescu, Adrian, Varghese, Tansen, Trampert, Achim, Straßburg, Martin, Lugauer, Hans-Jürgen, Wehmann, Hergo-Heinrich, Waag, Andreas
Published in Journal of crystal growth (15.10.2017)
Published in Journal of crystal growth (15.10.2017)
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Journal Article
Demonstration of (In, Ga)N/GaN Core–Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars
Albert, Steven, Bengoechea-Encabo, Ana, Ledig, Johannes, Schimpke, Tilman, Sánchez-Garcia, Miguel A, Strassburg, Martin, Waag, Andreas, Calleja, Enrique
Published in Crystal growth & design (05.08.2015)
Published in Crystal growth & design (05.08.2015)
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Polarity Control in 3D GaN Structures Grown by Selective Area MOVPE
Wang, Xue, Li, Shunfeng, Fündling, Sönke, Wei, Jiandong, Erenburg, Milena, Wehmann, Hergo-H, Waag, Andreas, Bergbauer, Werner, Strassburg, Martin, Jahn, Uwe, Riechert, Henning
Published in Crystal growth & design (02.05.2012)
Published in Crystal growth & design (02.05.2012)
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On the origin of IQE-'droop' in InGaN LEDs
Laubsch, Ansgar, Sabathil, Matthias, Bergbauer, Werner, Strassburg, Martin, Lugauer, Hans, Peter, Matthias, Lutgen, Stephan, Linder, Norbert, Streubel, Klaus, Hader, Jörg, Moloney, Jerome V., Pasenow, Bernhard, Koch, Stephan W.
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Growth and characterization of mixed polar GaN columns and core-shell LEDs
Wang, Xue, Jahn, Uwe, Mandl, Martin, Schimpke, Tilman, Hartmann, Jana, Ledig, Johannes, Straßburg, Martin, Wehmann, Hergo-H., Waag, Andreas
Published in Physica status solidi. A, Applications and materials science (01.04.2015)
Published in Physica status solidi. A, Applications and materials science (01.04.2015)
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Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE
Li, Shunfeng, Wang, Xue, Mohajerani, Matin Sadat, Fündling, Sönke, Erenburg, Milena, Wei, Jiandong, Wehmann, Hergo-Heinrich, Waag, Andreas, Mandl, Martin, Bergbauer, Werner, Strassburg, Martin
Published in Journal of crystal growth (01.02.2013)
Published in Journal of crystal growth (01.02.2013)
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Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale
Wolter, Stefan, Spende, Hendrik, Gülink, Jan, Hartmann, Jana, Wehmann, Hergo-Heinrich, Waag, Andreas, Lex, Andreas, Avramescu, Adrian, Lugauer, Hans-Jürgen, Malm, Norwin von, Drolet, Jean-Jacques, Strassburg, Martin
Published in Nanomaterials (Basel, Switzerland) (25.03.2021)
Published in Nanomaterials (Basel, Switzerland) (25.03.2021)
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Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage
Svrcek, Vladimir, Kolenda, Marek, Kadys, Arunas, Reklaitis, Ignas, Dobrovolskas, Darius, Malinauskas, Tadas, Lozach, Mickael, Mariotti, Davide, Strassburg, Martin, Tomašiūnas, Roland
Published in Nanomaterials (Basel, Switzerland) (12.12.2018)
Published in Nanomaterials (Basel, Switzerland) (12.12.2018)
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Towards nanorod LEDs: Numerical predictions and controlled growth
Kölper, Christopher, Bergbauer, Werner, Drechsel, Philipp, Sabathil, Matthias, Straßburg, Martin, Lugauer, Hans-Jürgen, Witzigmann, Bernd, Fündling, Sönke, Li, Shunfeng, Wehmann, Hergo-Heinrich, Waag, Andreas
Published in Physica status solidi. C (01.07.2011)
Published in Physica status solidi. C (01.07.2011)
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Review-Visible LEDs: More than Efficient Light
Taki, Tetsuya, Strassburg, Martin
Published in ECS journal of solid state science and technology (2020)
Published in ECS journal of solid state science and technology (2020)
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Journal Article
Light emitting devices: challenges and applications
Taki, Tetsuya, Drolet, Jean-Jacques, Strassburg, Martin
Published in Proceedings of the International Display Workshops (10.12.2020)
Published in Proceedings of the International Display Workshops (10.12.2020)
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