SiGe-channel heterojunction p-MOSFET's
Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Johnson, J.B.
Published in IEEE transactions on electron devices (01.01.1994)
Published in IEEE transactions on electron devices (01.01.1994)
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Journal Article
Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
Patton, G.L., Iyer, S.S., Delage, S.L., Tiwari, S., Stork, J.M.C.
Published in IEEE electron device letters (01.04.1988)
Published in IEEE electron device letters (01.04.1988)
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Journal Article
High-mobility modulation-doped graded SiGe-channel p-MOSFET's
VERDOCKT-VANDEBROEK, S, CRABBE, E. F, WARREN, A. C, MEYERSON, B. S, HARAME, D. L, RESTLE, P. J, STORK, J. M. C, MEGDANIS, A. C, STANIS, C. L, BRIGHT, A. A, KROESEN, G. M. W
Published in IEEE electron device letters (01.08.1991)
Published in IEEE electron device letters (01.08.1991)
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Journal Article
UHVCVD growth of Si/SiGe heterostructures and their applications
Meyerson, B S, Ismail, K E, Harame, D L, LeGoues, F K, Stork, J M C
Published in Semiconductor science and technology (01.11.1994)
Published in Semiconductor science and technology (01.11.1994)
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Journal Article
Conference Proceeding
Graded-SiGe-base, poly-emitter heterojunction bipolar transistors
Patton, G.L., Harame, D.L., Stork, J.M.C., Meyerson, B.S., Scilla, G.J., Ganin, E.
Published in IEEE electron device letters (01.12.1989)
Published in IEEE electron device letters (01.12.1989)
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Journal Article
73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
Crabbe, E.F., Comfort, J.H., Lee, W., Cressler, J.D., Meyerson, B.S., Megdanis, A.C., Sun, J.Y.-C., Stork, J.M.C.
Published in IEEE electron device letters (01.05.1992)
Published in IEEE electron device letters (01.05.1992)
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Journal Article
High-low polysilicon-emitter SiGe-base bipolar transistors
Crabbe, E.F., Comfort, J.H., Cressler, J.D., Sun, J.Y.-C., Stork, J.M.C.
Published in IEEE electron device letters (01.10.1993)
Published in IEEE electron device letters (01.10.1993)
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Journal Article
Epitaxial-base transistors with ultrahigh vacuum chemical vapor deposition (UHV/CVD) epitaxy: enhanced profile control for greater flexibility in device design
Harame, D.L., Stork, J.M.C., Meyerson, B.S., Nguyen, T.N., Scilla, G.J.
Published in IEEE electron device letters (01.04.1989)
Published in IEEE electron device letters (01.04.1989)
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Journal Article
The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs
Cheng, B., Cao, M., Rao, R., Inani, A., Vande Voorde, P., Greene, W.M., Stork, J.M.C., Zhiping Yu, Zeitzoff, P.M., Woo, J.C.S.
Published in IEEE transactions on electron devices (01.07.1999)
Published in IEEE transactions on electron devices (01.07.1999)
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Journal Article
Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors
Cressler, J.D., Comfort, J.H., Crabbe, E.F., Patton, G.L., Lee, W., Sun, J.Y., Stork, J.M.C., Meyerson, B.S.
Published in IEEE electron device letters (01.04.1991)
Published in IEEE electron device letters (01.04.1991)
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Journal Article
On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues
Cressler, J.D., Crabbe, E.F., Comfort, J.H., Stork, J.M.C., Sun, J.Y.-C.
Published in IEEE transactions on electron devices (01.03.1993)
Published in IEEE transactions on electron devices (01.03.1993)
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Journal Article
Partial-SOI isolation structure for reduced bipolar transistor parasitics
Burghartz, J.N., Cressler, J.D., Warnock, J., McIntosh, R.C., Jenkins, K.A., Sun, J.Y.-C., Comfort, J.H., Stork, J.M.C., Stanis, C.L., Lee, W., Danner, D.D.
Published in IEEE electron device letters (01.08.1992)
Published in IEEE electron device letters (01.08.1992)
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Journal Article
Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology
Burghartz, J.N., Mader, S.R., Ginsberg, B.J., Meyerson, B.S., Stork, J.M.C., Stanis, C.L., Sun, U.Y.-C., Polcari, M.R.
Published in IEEE transactions on electron devices (01.02.1991)
Published in IEEE transactions on electron devices (01.02.1991)
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Journal Article
Design considerations of high-performance narrow-emitter bipolar transistors
Tang, D.D., Tze-Chiang Chen, Ching-Te Chuang, Li, G.P., Stork, J.M.C., Ketchen, M.B., Hackbarth, E., Ning, T.H.
Published in IEEE electron device letters (01.04.1987)
Published in IEEE electron device letters (01.04.1987)
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Journal Article
Non-ideal base current in bipolar transistors at low temperatures
Woo, J.C.S., Plummer, J.D., Stork, J.M.C.
Published in IEEE transactions on electron devices (01.01.1987)
Published in IEEE transactions on electron devices (01.01.1987)
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Journal Article
Bipolar transistor with self-aligned lateral profile
Li, G.P., Tze-Chiang Chen, Ching-Te Chuang, Stork, J.M.C., Tang, D.D., Ketchen, M.B., Li-Kong Wang
Published in IEEE electron device letters (01.08.1987)
Published in IEEE electron device letters (01.08.1987)
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Journal Article