Optimizing misfit dislocation glide kinetics for enhanced threading dislocation density reduction in Si1−xGex/Si(001) layers through dynamic growth rate control
Becker, L., Storck, P., Liu, Y., Schwalb, G., Schroeder, T., Fischer, I. A., Albrecht, M.
Published in Journal of applied physics (28.05.2024)
Published in Journal of applied physics (28.05.2024)
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Journal Article
Coating of PLA-nanoparticles with cyclic, arginine-rich cell penetrating peptides enables oral delivery of liraglutide
Uhl, P., Grundmann, C., Sauter, M., Storck, P., Tursch, A., Özbek, S., Leotta, K., Roth, R., Witzigmann, D., Kulkarni, J.A., Fidelj, V., Kleist, C., Cullis, P.R., Fricker, G., Mier, W.
Published in Nanomedicine (01.02.2020)
Published in Nanomedicine (01.02.2020)
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Journal Article
Strained Germanium Gate-All-Around pMOS Device Demonstration Using Selective Wire Release Etch Prior to Replacement Metal Gate Deposition
Witters, L., Arimura, H., Sebaai, F., Hikavyy, A., Milenin, A. P., Loo, R., De Keersgieter, A., Eneman, G., Schram, T., Wostyn, K., Devriendt, K., Schulze, A., Lieten, R., Bilodeau, S., Cooper, E., Storck, P., Chiu, E., Vrancken, C., Favia, P., Vancoille, E., Mitard, J., Langer, R., Opdebeeck, A., Holsteyns, F., Waldron, N., Barla, K., De Heyn, V., Mocuta, D., Collaert, N.
Published in IEEE transactions on electron devices (01.11.2017)
Published in IEEE transactions on electron devices (01.11.2017)
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Journal Article
High-temperature x-ray characterization of GaN epitaxially grown on Sc2O3/Y2O3/Si(1 1 1) heterostructures
ZAUMSEIL, P, TARNAWSKA, L, STORCK, P, SCHROEDER, T
Published in Journal of physics. D, Applied physics (10.08.2011)
Published in Journal of physics. D, Applied physics (10.08.2011)
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Journal Article
A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures
Giussani, A, Zaumseil, P, Seifarth, O, Storck, P, Schroeder, T
Published in New journal of physics (06.09.2010)
Published in New journal of physics (06.09.2010)
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Journal Article
Synchrotron x-ray characterization of structural defects in epi-Ge/Pr2O3/Si(1 1 1) layer stacks
Zaumseil, P, Giussani, A, Storck, P, Schroeder, T
Published in Journal of physics. D, Applied physics (07.11.2009)
Published in Journal of physics. D, Applied physics (07.11.2009)
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Journal Article
Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures
Schroeder, T, Zaumseil, P, Seifarth, O, Giussani, A, Müssig, H-J, Storck, P, Geiger, D, Lichte, H, Dabrowski, J
Published in New journal of physics (07.11.2008)
Published in New journal of physics (07.11.2008)
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Journal Article
Complex interface and growth analysis of single crystalline epi-Si(111)/Y2O3/ Pr2O3/Si(111) heterostructures: Strain engineering by oxide buffer control
Wilke, A., Yang, J.-M., Kim, J. W., Seifarth, O., Dietrich, B., Giussani, A., Zaumseil, P., Storck, P., Schroeder, T.
Published in Surface and interface analysis (01.04.2011)
Published in Surface and interface analysis (01.04.2011)
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Journal Article
Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)
Schroeder, T., Giussani, A., Muessig, H.-J., Weidner, G., Costina, I., Wenger, Ch, Lukosius, M., Storck, P., Zaumseil, P.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Conference Proceeding
Kinetics of SiGe chemical vapor deposition from chloride precursors
Lovtsus, A.A., Segal, A.S., Sid’ko, A.P., Talalaev, R.A., Storck, P., Kadinski, L.
Published in Journal of crystal growth (25.01.2006)
Published in Journal of crystal growth (25.01.2006)
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Journal Article
Conference Proceeding
Benefits of commercial data link security
Storck, P.
Published in 2013 Integrated Communications, Navigation and Surveillance Conference (ICNS) (01.04.2013)
Published in 2013 Integrated Communications, Navigation and Surveillance Conference (ICNS) (01.04.2013)
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Conference Proceeding
Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration
Loo, R., Jourdain, A., Rengo, G., Porret, C., Hikavyy, A., Liebens, M., Becker, L., Storck, P., Beyer, G., Beyne, E.
Published in ECS journal of solid state science and technology (01.01.2021)
Published in ECS journal of solid state science and technology (01.01.2021)
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Journal Article
Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors
Segal, A.S., Galyukov, A.O., Kondratyev, A.V., Sid’ko, A.P., Karpov, S.Yu, Makarov, Yu.N., Siebert, W., Storck, P.
Published in Microelectronic engineering (01.05.2001)
Published in Microelectronic engineering (01.05.2001)
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Journal Article
Epitaxial Growth of Active Si on Top of SiGe Etch Stop Layer in View of 3D Device Integration
Loo, Roger, Jourdain, Anne, Rengo, Gianluca, Porret, Clement, Hikavyy, Andriy Yakovitch, Liebens, Maarten, Becker, Lucas, Storck, Peter, Beyer, Gerald, Beyne, Eric
Published in ECS transactions (08.09.2020)
Published in ECS transactions (08.09.2020)
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Journal Article
Sublimation of Snow from Coniferous Forests in a Climate Model
Essery, Richard, Pomeroy, John, Parviainen, Jason, Storck, Pascal
Published in Journal of climate (01.06.2003)
Published in Journal of climate (01.06.2003)
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Journal Article
Benefits of commercial data link security
Storck, P. E.
Published in 2013 Integrated Communications, Navigation and Surveillance Conference (ICNS) (01.04.2013)
Published in 2013 Integrated Communications, Navigation and Surveillance Conference (ICNS) (01.04.2013)
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Conference Proceeding
Synchrotron x-ray characterization of structural defects in epi-Ge/Pr 2 O 3 /Si(1 1 1) layer stacks
Zaumseil, P, Giussani, A, Storck, P, Schroeder, T
Published in Journal of physics. D, Applied physics (07.11.2009)
Published in Journal of physics. D, Applied physics (07.11.2009)
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Journal Article
(Invited) Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers
Kozlowski, Gregorz, Fursenko, Oksana, Zaumseil, Peter, Schroeder, Thomas, Vorderwestner, Martin, Storck, Peter
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article