Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs
MANIC, I, DJORIC-VELJKOVIC, S, DAVIDOVIC, V, DANKOVIC, D, GOLUBOVIC, S, STOJADINOVIC, N
Published in IET circuits, devices & systems (01.04.2008)
Published in IET circuits, devices & systems (01.04.2008)
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Journal Article
Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks
Atanassova, E, Stojadinovi, N, Spassov, D, Mani, I, Paskaleva, A
Published in Semiconductor science and technology (01.05.2013)
Published in Semiconductor science and technology (01.05.2013)
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Journal Article
A method for negative bias temperature instability (NBTI) measurements on power VDMOS transistors
Priji, A, Dankovi, D, Vra ar, Lj, Mani, I, Priji, Z, Stojadinovi, N
Published in Measurement science & technology (01.08.2012)
Published in Measurement science & technology (01.08.2012)
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Journal Article
Electrical stressing effects in commercial power VDMOSFETs
STOJADINOVIC, N, MANIC, I, DAVIDOVIC, V, DANKOVIC, D, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, DIMITRIJEV, S
Published in IEE proceedings. Circuits, devices, and systems (01.06.2006)
Published in IEE proceedings. Circuits, devices, and systems (01.06.2006)
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