Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE
Nattermann, L., Ludewig, P., Sterzer, E., Volz, K.
Published in Journal of crystal growth (15.07.2017)
Published in Journal of crystal growth (15.07.2017)
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Journal Article
Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs
Sterzer, E., Knaub, N., Ludewig, P., Straubinger, R., Beyer, A., Volz, K.
Published in Journal of crystal growth (15.12.2014)
Published in Journal of crystal growth (15.12.2014)
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Journal Article
MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8
Nattermann, L., Beyer, A., Ludewig, P., Hepp, T., Sterzer, E., Volz, K.
Published in Journal of crystal growth (01.04.2017)
Published in Journal of crystal growth (01.04.2017)
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Journal Article
(GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
Sterzer, E., Ringler, B., Nattermann, L., Beyer, A., von Hänisch, C., Stolz, W., Volz, K.
Published in Journal of crystal growth (01.06.2017)
Published in Journal of crystal growth (01.06.2017)
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Journal Article
An experimental approach for real time mass spectrometric CVD gas phase investigations
Nattermann, L., Maßmeyer, O., Sterzer, E., Derpmann, V., Chung, H. Y., Stolz, W., Volz, K.
Published in Scientific reports (10.01.2018)
Published in Scientific reports (10.01.2018)
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Journal Article
Efficient nitrogen incorporation in GaAs using novel metal organic As–N precursor di-tertiary-butyl-arsano-amine (DTBAA)
Sterzer, E., Beyer, A., Duschek, L., Nattermann, L., Ringler, B., Leube, B., Stegmüller, A., Tonner, R., von Hänisch, C., Stolz, W., Volz, K.
Published in Journal of crystal growth (01.04.2016)
Published in Journal of crystal growth (01.04.2016)
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Journal Article
1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
Sterzer, E., Maßmeyer, O., Nattermann, L., Jandieri, K., Gupta, S., Beyer, A., Ringler, B., von Hänisch, C., Stolz, W., Volz, K.
Published in AIP advances (01.05.2018)
Published in AIP advances (01.05.2018)
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Journal Article
Novel nitrogen/gallium precursor [Ga(bdma)H2] for MOVPE
Sterzer, E., Beyer, A., Nattermann, L., Schorn, W., Schlechter, K., Pulz, S., Sundermeyer, J., Stolz, W., Volz, K.
Published in Journal of crystal growth (15.11.2016)
Published in Journal of crystal growth (15.11.2016)
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Journal Article
Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE
Maßmeyer, O., Sterzer, E., Nattermann, L., Stolz, W., Volz, K.
Published in Applied surface science (15.11.2018)
Published in Applied surface science (15.11.2018)
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Journal Article
MOVPE growth and characterization of quaternary Ga(PAsBi)/GaAs alloys for optoelectronic applications
Nattermann, L., Ludewig, P., Knaub, N., Rosemann, N.W., Hepp, T., Sterzer, E., Jin, S.R., Hild, K., Chatterjee, S., Sweeney, S.J., Stolz, W., Volz, K.
Published in Applied materials today (01.12.2016)
Published in Applied materials today (01.12.2016)
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Journal Article