On the morphology and the electrochemical formation mechanism of mesoporous silicon
Lehmann, V, Stengl, R, Luigart, A
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.01.2000)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01.01.2000)
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A model for multistep trap-assisted tunneling in thin high- k dielectrics
Blank, O., Reisinger, H., Stengl, R., Gutsche, M., Wiest, F., Capodieci, V., Schulze, J., Eisele, I.
Published in Journal of applied physics (15.02.2005)
Published in Journal of applied physics (15.02.2005)
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SiGe bipolar technology for automotive radar applications
Bock, J., Schafer, H., Aufinger, K., Stengl, R., Boguth, S., Schreiter, R., Rest, M., Knapp, H., Wurzer, M., Perndl, W., Bottner, T., Meister, T.F.
Published in Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting (2004)
Published in Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting (2004)
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Selective epitaxial growth of SiGe:C for high speed HBTs
Schäfer, H., Böck, J., Stengl, R., Knapp, H., Aufinger, K., Wurzer, M., Boguth, S., Rest, M., Schreiter, R., Meister, T.F.
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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SiGe bipolar technology with 3.9 ps gate delay
Meister, Schafer, Aufinger, Stengl, Boguth, Schreiter, Rest, Knapp, Wurzer, Mitchell, Bottner, Bock
Published in 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) (2003)
Published in 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) (2003)
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42 GHz static frequency divider in a Si/SiGe bipolar technology
Wurzer, M., Meister, T.F., Schafer, I., Knapp, H., Bock, J., Stengl, R., Aufinger, K., Franosch, M., Rest, M., Moller, M., Rein, H.-M., Felder, A.
Published in 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers (01.01.1997)
Published in 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers (01.01.1997)
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Bubble-free wafer bonding of GaAs and InP on silicon in a microcleanroom
LEHMANN, V, MITANI, K, STENGL, R, MII, T, GOSELE, U
Published in Japanese Journal of Applied Physics (01.12.1989)
Published in Japanese Journal of Applied Physics (01.12.1989)
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Stability of interfacial oxide layers during silicon wafer bonding
AHN, K.-Y, STENGL, R, TAN, T. Y, GÖSELE, U, SMITH, P
Published in Journal of applied physics (15.01.1989)
Published in Journal of applied physics (15.01.1989)
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Variation of lateral doping as a field terminator for high-voltage power devices
Stengl, R., Gosele, U., Fellinger, C., Beyer, M., Walesch, S.
Published in IEEE transactions on electron devices (01.03.1986)
Published in IEEE transactions on electron devices (01.03.1986)
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A 200-A/2000-V MOS-GTO with improved cell design
Stoisiek, M., Oppermann, K.G., Stengl, R.
Published in IEEE transactions on electron devices (01.06.1992)
Published in IEEE transactions on electron devices (01.06.1992)
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Formation of methyne intermediates by hydrogenation of surface carbon on Ru(001)
Barteau, M.A., Feulner, P., Stengl, R., Broughton, J.Q., Menzel, D.
Published in Journal of catalysis (01.07.1985)
Published in Journal of catalysis (01.07.1985)
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Tunneling structures fabricated by silicon wafer direct bonding
STENGL, R, AHN, K.-Y, MII, T, YANG, W.-S, GOSELE, U
Published in Japanese Journal of Applied Physics (01.12.1989)
Published in Japanese Journal of Applied Physics (01.12.1989)
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Gold Gettering in Directly Bonded Silicon Wafers
Yang, W.-S., Ahn, K.-Y., Marioton, B. P. R., Stengl, R., Gösele, U.
Published in Japanese Journal of Applied Physics (01.05.1989)
Published in Japanese Journal of Applied Physics (01.05.1989)
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3.3 ps SiGe bipolar technology
Bock, J., Schafer, H., Knapp, H., Aufinger, K., Wurzer, M., Boguth, S., Bottner, T., Stengl, R., Perndl, W., Meister, T.F.
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
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Conference Proceeding
Sub 5 ps SiGe bipolar technology
Bock, J., Schafer, H., Knapp, H., Zoschg, D., Aufinger, K., Wurzer, M., Boguth, S., Rest, M., Schreiter, R., Stengl, R., Meister, T.F.
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
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High-speed SiGe HBT technology and applications to mm-wave circuits
Meister, T.F., Knapp, H., Schafer, H., Aufinger, K., Stengl, R., Boguth, S., Schreiter, R., Rest, M., Perndl, W., Wurzer, M., Bottner, T., Bock, J.
Published in Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004 (2004)
Published in Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004 (2004)
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