Advances in group III-nitride-based deep UV light-emitting diode technology
Kneissl, M, Kolbe, T, Chua, C, Kueller, V, Lobo, N, Stellmach, J, Knauer, A, Rodriguez, H, Einfeldt, S, Yang, Z, Johnson, N M, Weyers, M
Published in Semiconductor science and technology (01.01.2011)
Published in Semiconductor science and technology (01.01.2011)
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Journal Article
The critical thickness of InGaN on (0 0 0 1)GaN
Leyer, M., Stellmach, J., Meissner, Ch, Pristovsek, M., Kneissl, M.
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
Conference Proceeding
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
Lobo Ploch, N., Rodriguez, H., Stolmacker, C., Hoppe, M., Lapeyrade, M., Stellmach, J., Mehnke, F., Wernicke, T., Knauer, A., Kueller, V., Weyers, M., Einfeldt, S., Kneissl, M.
Published in IEEE transactions on electron devices (01.02.2013)
Published in IEEE transactions on electron devices (01.02.2013)
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Journal Article
MOVPE growth of semipolar (112¯2) AlN on m-plane (101¯0) sapphire
Stellmach, J., Frentrup, M., Mehnke, F., Pristovsek, M., Wernicke, T., Kneissl, M.
Published in Journal of crystal growth (15.09.2012)
Published in Journal of crystal growth (15.09.2012)
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Journal Article
Analysis of crystal orientation in AlN layers grown on m-plane sapphire
Mogilatenko, A., Kirmse, H., Stellmach, J., Frentrup, M., Mehnke, F., Wernicke, T., Kneissl, M., Weyers, M.
Published in Journal of crystal growth (15.08.2014)
Published in Journal of crystal growth (15.08.2014)
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Journal Article
Structural and optical properties of semipolar (112¯2) AlGaN grown on (101¯0) sapphire by metal–organic vapor phase epitaxy
Stellmach, J., Mehnke, F., Frentrup, M., Reich, C., Schlegel, J., Pristovsek, M., Wernicke, T., Kneissl, M.
Published in Journal of crystal growth (15.03.2013)
Published in Journal of crystal growth (15.03.2013)
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Journal Article
Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes
Kolbe, T., Stellmach, J., Mehnke, F., Rothe, M.-A., Kueller, V., Knauer, A., Einfeldt, S., Wernicke, T., Weyers, M., Kneissl, M.
Published in Physica status solidi. A, Applications and materials science (01.01.2016)
Published in Physica status solidi. A, Applications and materials science (01.01.2016)
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Journal Article
High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor
Stellmach, J., Pristovsek, M., Savaş, Ö., Schlegel, J., Yakovlev, E.V., Kneissl, M.
Published in Journal of crystal growth (15.01.2011)
Published in Journal of crystal growth (15.01.2011)
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Journal Article
Growth mode of InGaN on GaN (0001) in MOVPE
Pristovsek, M., Stellmach, J., Leyer, M., Kneissl, M.
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs
Kueller, V., Knauer, A., Reich, C., Mogilatenko, A., Weyers, M., Stellmach, J., Wernicke, T., Kneissl, M., Zhihong Yang, Chua, C. L., Johnson, N. M.
Published in IEEE photonics technology letters (15.09.2012)
Published in IEEE photonics technology letters (15.09.2012)
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Journal Article
Growth mode transition and relaxation of thin InGaN layers on GaN (0001)
Pristovsek, Markus, Kadir, Abdul, Meissner, Christian, Schwaner, Tilman, Leyer, Martin, Stellmach, Joachim, Kneissl, Michael, Ivaldi, Francesco, Kret, Sławomir
Published in Journal of crystal growth (01.06.2013)
Published in Journal of crystal growth (01.06.2013)
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Journal Article
Advances in group III-nitride-based deep UV light-emitting diode technology: From heterostructures to nanostructures
KNEISSL, M, KOLBE, T, JOHNSON, N. M, WEYERS, M, CHUA, C, KUELLER, V, LOBO, N, STELLMACH, J, KNAUER, A, RODRIGUEZ, H, EINFELDT, S, YANG, Z
Published in Semiconductor science and technology (2011)
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Published in Semiconductor science and technology (2011)
Journal Article
High aluminium content and high growth rates of AIGaN in a close-coupled showerhead MOVPE reactor
STELLMACH, J, PRISTOVSEK, M, SAVAS, Ö, SCHLEGEL, J, YAKOVLEV, E. V, KNEISSL, M
Published in Journal of crystal growth (2011)
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Published in Journal of crystal growth (2011)
Conference Proceeding
SEC Proposes Climate Disclosure Rules-Part 2
Eastwood, Athena, Fallon, Archie, Cray, Elizabeth P, Stebbins, Robert B, Stellmach, William J, Thomas, William L
Published in The Investment Lawyer (01.10.2022)
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Published in The Investment Lawyer (01.10.2022)
Trade Publication Article
Second Circuit Eliminates "Meaningfully Close Personal Relationship" Test
Schachter, Michael S, Gray, Elizabeth P, Anderson, James E, Stellmach, William J
Published in The Investment Lawyer (01.11.2017)
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Published in The Investment Lawyer (01.11.2017)
Journal Article
Trade Publication Article
SEC Proposes Climate Disclosure Rules (Part 1)
Eastwood, Athena, Fallon, Denis A (Archie), Gray, Elizabeth P, Stebbins, Robert B, Stellmach, William J, Thomas, William L
Published in The Investment Lawyer (01.08.2022)
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Published in The Investment Lawyer (01.08.2022)
Trade Publication Article
Regulatory monitor
Farr, Willkie, Llp, Gallagher, Cottrell, Amelia A, Gray, Elizabeth P, Klotz, Martin B, Schachter, Michael S, Stellmach, William J, Hanniford, Katherine Doty
Published in The investment lawyer (01.02.2017)
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Published in The investment lawyer (01.02.2017)
Journal Article