Fine line metallization by coextrusion technology for next generation solar cells
Beutel, M., Lewis, A., Prondzinski, M., Selbmann, F., Richter, P., Bamberg, F., Raschtschepkin, P., Krause, A., Koch, C., Hentsche, M., Stegemann, K.-H., Schneiderlöchner, E., Neuhaus, H.
Published in Solar energy materials and solar cells (01.12.2014)
Published in Solar energy materials and solar cells (01.12.2014)
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Conference Proceeding
Ion irradiation through SiO2/Si interfaces: Non-conventional fabrication of Si nanocrystals for memory applications
Schmidt, B., Heinig, K.-H., Röntzsch, L., Müller, T., Stegemann, K.-H., Votintseva, E.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.01.2006)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.01.2006)
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Journal Article
Memory properties of Si + implanted gate oxides: from MOS capacitors to nvSRAM
von Borany, J, Gebel, T, Stegemann, K.-H, Thees, H.-J, Wittmaack, M
Published in Solid-state electronics (01.11.2002)
Published in Solid-state electronics (01.11.2002)
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Journal Article
Memory devices obtained by Si+ irradiation through poly-Si/SiO2 gate stack
Dimitrakis, P, Normand, P, Vontitseva, E, Stegemann, K H, Heinig, K H, Schmidt, B
Published in Journal of physics. Conference series (01.01.2005)
Published in Journal of physics. Conference series (01.01.2005)
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Journal Article
Ion beam synthesis of narrow Ge nanocluster bands in thin SiO2 films
VON BORANY, J, HEINIG, K.-H, GRÖTZSCHEL, R, KLIMENKOV, M, STROBEL, M, STEGEMANN, K.-H, THEES, H.-J
Published in Microelectronic engineering (01.09.1999)
Published in Microelectronic engineering (01.09.1999)
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Journal Article
A single-crystal Si-resonator with on-chip readout amplifier in standard CMOS
Bertz, A., Symanzik, H., Steiniger, C., Höffer, A., Griesbach, K., Stegemann, K., Ebest, G., Gessner, T.
Published in Sensors and actuators. A. Physical. (30.09.2001)
Published in Sensors and actuators. A. Physical. (30.09.2001)
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Journal Article
Non-volatile memories based on Si +-implanted gate oxides
Gebel, T., von Borany, J., Thees, H.-J., Wittmaack, M., Stegemann, K.-H., Skorupa, W.
Published in Microelectronic engineering (01.11.2001)
Published in Microelectronic engineering (01.11.2001)
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Conference Proceeding
Integration of a TiN barrier layer formed by rapid thermal annealing in a 1 μm CMOS process
Stegemann, K.-H., Heinig, V., Fontaine, G., Palorec, J., Beyer, C.
Published in Applied surface science (01.10.1995)
Published in Applied surface science (01.10.1995)
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Conference Proceeding
On the calculation of the pooled error in unweighted variance analysis according to model 1 and unequal sampling volumes
Stegemann, K. (Koordinierungsstelle fuer Feldversuchswesen, Bad Lauchstaedt (German D.R.)), Herredoerfer, G. (Forschungszentrum fuer Tierproduktion, Dummerstorf-Rostock (German D.R.)), Gerulat, S. (VEB Datenverarbeitungszentrum, Halle (German D.R.))
Published in Archiv für Acker- und Pflanzenbau und Bodenkunde (1985)
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Published in Archiv für Acker- und Pflanzenbau und Bodenkunde (1985)
Journal Article
Studies in data evaluation of nonplanned surveys by means of variance analysis according to model 1 at unequal group size and in the interpretation of the results obtained [field trial]
Stegemann, K. (Koordinierungsstelle fuer Feldversuchswesen, Bad Lauchstaedt (German D.R.)), Herrendoerfer, G. (Forschungszentrum fuer Tierproduktion, Dummerstorf-Rostock (German D.R.)), Gerulat, S. (VEB Datenverarbeitungszentrum, Halle (German D.R.))
Published in Archiv für Acker- und Pflanzenbau und Bodenkunde (1984)
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Published in Archiv für Acker- und Pflanzenbau und Bodenkunde (1984)
Journal Article
Problems of evaluating unplanned collection data for the analysis of fertilization effects under special consideration of nitrogen fertilization to winter wheat
Stegemann, K. (Koordinierungsstelle fuer Feldversuchswesen, Band Lauchstaedt (German D.R.)), Kuehn, G. (Forschungszentrum fuer Bodenfruchtbarkeit, Muencheberg (German D.R.)), Garz, J. (Martin-Luther-Universitaet Halle-Wittenberg (German D.R.). Sektion Pflanzenproduktion)
Published in Archiv für Acker- und Pflanzenbau und Bodenkunde (1985)
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Published in Archiv für Acker- und Pflanzenbau und Bodenkunde (1985)
Journal Article
Memory devices obtained by Si + irradiation through poly-Si/SiO 2 gate stack
Dimitrakis, P, Normand, P, Vontitseva, E, Stegemann, K H, Heinig, K H, Schmidt, B
Published in Journal of physics. Conference series (01.01.2005)
Published in Journal of physics. Conference series (01.01.2005)
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Journal Article
Non-volatile memories based on Si super(+)-implanted gate oxides
Gebel, T, Von Borany, J, Thees, H-J, Wittmaack, M, Stegemann, K-H, Skorupa, W
Published in Microelectronic engineering (01.11.2001)
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Published in Microelectronic engineering (01.11.2001)
Journal Article
Microstructure and electrical properties of Ge- and Si-nanoclusters in implanted gate oxide for embedded memory applications
Stegemann, K.-H., Thees, H.-J., Wittmaack, M., Van Borany, J., Heeinig, K.H., Gebel, T.
Published in 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) (2000)
Published in 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) (2000)
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