Reliability of advanced high-k/metal-gate n-FET devices
Get full text
Journal Article
Conference Proceeding
The impact of gate-oxide breakdown on SRAM stability
Rodriguez, R., Stathis, J.H., Linder, B.P., Kowalczyk, S., Chuang, C.T., Joshi, R.V., Northrop, G., Bernstein, K., Bhavnagarwala, A.J., Lombardo, S.
Published in IEEE electron device letters (01.09.2002)
Published in IEEE electron device letters (01.09.2002)
Get full text
Journal Article
Statistics of progressive breakdown in ultra-thin oxides
Get full text
Journal Article
Conference Proceeding
Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substrates
Stathis, J.H., Bolam, R., Yang, M., Hook, T.B., Chou, A., Larosa, G.
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
Get full text
Journal Article
Conference Proceeding
Effect and model of gate oxide breakdown on CMOS inverters
Get full text
Journal Article
Conference Proceeding
Reliability of MOS devices with tungsten gates
Palumbo, F., Lombardo, S., Stathis, J.H., Narayanan, V., McFeely, F.R., Yurkas, J.J.
Published in Microelectronic engineering (01.04.2004)
Published in Microelectronic engineering (01.04.2004)
Get full text
Journal Article
Conference Proceeding
Oxide scaling limit for future logic and memory technology
Get full text
Journal Article
Conference Proceeding
Hybrid-orientation technology (HOT): opportunities and challenges
Min Yang, Chan, V.W.C., Chan, K.K., Shi, L., Fried, D.M., Stathis, J.H., Chou, A.I., Gusev, E., Ott, J.A., Burns, L.E., Fischetti, M.V., Meikei Ieong
Published in IEEE transactions on electron devices (01.05.2006)
Published in IEEE transactions on electron devices (01.05.2006)
Get full text
Journal Article
PBTI relaxation dynamics after AC vs. DC stress in high-k/metal gate stacks
Zhao, K, Stathis, J H, Kerber, A, Cartier, E
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Get full text
Conference Proceeding
PBTI under dynamic stress: From a single defect point of view
Zhao, K, Stathis, J H, Linder, B P, Cartier, E, Kerber, A
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Published in 2011 International Reliability Physics Symposium (01.04.2011)
Get full text
Conference Proceeding
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
AMAT, E, RODRIGUEZ, R, NAFRIA, M, AYMERICH, X, STATHIS, J. H
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
Get full text
Conference Proceeding
Journal Article
Role of interface layer in stress-induced leakage current in high-k/metal-gate dielectric stacks
Chang, W L, Stathis, J H, Cartier, E
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Published in 2010 IEEE International Reliability Physics Symposium (01.05.2010)
Get full text
Conference Proceeding
Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
Linder, B.P., Lombardo, S., Stathis, J.H., Vayshenker, A., Frank, D.J.
Published in IEEE electron device letters (01.11.2002)
Published in IEEE electron device letters (01.11.2002)
Get full text
Journal Article
Atomic hydrogen-induced degradation of thin SiO2 gate oxides
CARTIER, E, BUCHANAN, D. A, STATHIS, J. H, DIMARIA, D. J
Published in Journal of non-crystalline solids (01.07.1995)
Published in Journal of non-crystalline solids (01.07.1995)
Get full text
Conference Proceeding
Journal Article