Capacitance spectroscopy of structures with Si nanoparticles deposited onto crystalline silicon p-Si
Sobolev, M M, Ken, O S, Sreseli, O M, Yavsin, D A, Gurevich, S A
Published in Semiconductor science and technology (01.08.2019)
Published in Semiconductor science and technology (01.08.2019)
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Journal Article
Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties
Sreseli, O. M., Bert, N. A., Nevedomskii, V. N., Lihachev, A. I., Yassievich, I. N., Ershov, A. V., Nezhdanov, A. V., Mashin, A. I., Andreev, B. A., Yablonsky, A. N.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2020)
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Journal Article
5,10,15,20-tetraphenylporphyrin photoluminescence on nanoporous silicon substrates
Koroleva, M O, Elistratova, M A, Zakharova, I B, Li, G V, Sreseli, O M
Published in Journal of physics. Conference series (01.03.2020)
Published in Journal of physics. Conference series (01.03.2020)
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Journal Article
Structure, Morphology, Chemical Composition, and Optical Properties of Annealed Multilayer Ge/Al2O3 and Si/Ge/Si/Al2O3 Nanoperiodic Systems
Ershov, A. V., Levin, A. A., Baidakova, M. V., Bert, N. A., Sokura, L. A., Zaitsev, A. V., Kryukov, R. N., Zubkov, S. Yu, Nikolichev, D. E., Nezhdanov, A. V., Sreseli, O. M., Mashin, A. I.
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.12.2023)
Published in Surface investigation, x-ray, synchrotron and neutron techniques (01.12.2023)
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Journal Article
Electrical and Photoelectric Properties of α-Si/SiO2 and α-Ge/SiO2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures
Sreseli, O. M., Elistratova, M. A., Goryachev, D. N., Beregulin, E. V., Nevedomskii, V. N., Bert, N. A., Ershov, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
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Journal Article
Effect of gamma irradiation on the photoluminescence of porous silicon
Elistratova, M. A., Romanov, N. M., Goryachev, D. N., Zakharova, I. B., Sreseli, O. M.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2017)
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Journal Article
resonance enhancement of photoluminescence from silicon nanocrystallites
Belyakov, L. V., Goryachev, D. N., Sreseli, O. M.
Published in Physica Status Solidi (b) (01.02.2009)
Published in Physica Status Solidi (b) (01.02.2009)
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Journal Article
Luminescence enhancement by electrochemical etching of SiC(6H)
Petrova-Koch, V., Sreseli, O., Polisski, G., Kovalev, D., Muschik, T., Koch, F.
Published in Thin solid films (15.01.1995)
Published in Thin solid films (15.01.1995)
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Journal Article
Conference Proceeding
Electrical and Photoelectric Properties of [alpha]-Si/SiO.sub.2 and [alpha]-Ge/SiO.sub.2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures
Sreseli, O. M, Elistratova, M. A, Goryachev, D. N, Beregulin, E. V, Nevedomskii, V. N, Bert, N. A, Ershov, A. V
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2020)
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Journal Article
Electrolytic fabrication of porous silicon with the use of internal current source
Goryachev, D. N., Belyakov, L. V., Sreseli, O. M.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2003)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2003)
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Journal Article
Formation of thick porous silicon layers with insufficient minority carrier concentration
Goryachev, D. N., Belyakov, L. V., Sreseli, O. M.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2004)
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Journal Article
Porous semiconductors: why only silicon-based? A possible explanation
Goryachev, D N, Belyakov, L V, Sreseli, O M, Yaroshetskii, I D
Published in Semiconductor science and technology (01.03.1995)
Published in Semiconductor science and technology (01.03.1995)
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Journal Article
Manifestation of size-related quantum oscillations of the radiative exciton recombination time in the photoluminescence of silicon nanostructures
Sachenko, A. V., Kryuchenko, Yu. V., Sokolovskii, I. O., Sreseli, O. M.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2004)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2004)
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Journal Article
On the mechanism of porous silicon formation
Goryachev, D. N., Belyakov, L. V., Sreseli, O. M.
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2000)
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Journal Article