Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length
Khakifirooz, A., Kangguo Cheng, Reznicek, A., Adam, T., Loubet, N., Hong He, Kuss, J., Juntao Li, Kulkarni, P., Ponoth, S., Sreenivasan, R., Qing Liu, Doris, B., Shahidi, G.
Published in IEEE electron device letters (01.02.2012)
Published in IEEE electron device letters (01.02.2012)
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Journal Article
Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices
LOUBET, Nicolas, ADAM, Thomas, DORIS, Bruce, SAMPSON, Ron, RAYMOND, Mark, QING LIU, KANGGUO CHENG, SREENIVASAN, Raghavasimhan, REZNICEK, Alexander, KHARE, Prasanna, KLEEMEIER, Walter, PARUCHURI, Vamsi
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Conference Proceeding
ALD Resist Formed by Vapor-Deposited Self-Assembled Monolayers
Hong, Junsic, Porter, David W, Sreenivasan, Raghavasimhan, McIntyre, Paul C, Bent, Stacey F
Published in Langmuir (30.01.2007)
Published in Langmuir (30.01.2007)
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Journal Article
Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices
Loubet, Nicolas, Adam, Thomas, Raymond, Mark, Liu, Qing, Cheng, Kangguo, Sreenivasan, Raghavasimhan, Reznicek, Alexander, Khare, Prasanna, Kleemeier, Walter, Paruchuri, Vamsi, Doris, Bruce, Sampson, Ron
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Journal Article
Improvement in High- k (hboxHfO2/hboxSiO2)Reliability by Incorporation of Fluorine
Kang-ill Seo, Sreenivasan, R., McIntyre, P.C., Saraswat, K.C.
Published in IEEE electron device letters (01.10.2006)
Published in IEEE electron device letters (01.10.2006)
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Journal Article
Interface Layers for High-k/Ge Gate Stacks: Are They Necessary?
McIntyre, Paul, Chi, David, Chui, Chi On, Kim, Hyoungsub, Seo, Kang-Ill, Saraswat, Krishna, Sreenivasan, Raghavasimhan, Sugawara, Takuya, Aguirre-Testado, F. S., Wallace, Robert M.
Published in ECS transactions (20.10.2006)
Published in ECS transactions (20.10.2006)
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Journal Article
Modified fin cut after epitaxial growth
Lie, Fee Li, Sreenivasan, Raghavasimhan, Seo, Soon-Cheon, Kanakasabapathy, Sivananda K
Year of Publication 12.11.2019
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Year of Publication 12.11.2019
Patent
FinFET spacer without substrate gouging or spacer foot
Sreenivasan Raghavasimhan, Basker Veeraraghavan S, Cheng Kangguo, Khakifirooz Ali
Year of Publication 17.10.2017
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Year of Publication 17.10.2017
Patent
Method of preventing epitaxy creeping under the spacer
Basker Veeraraghavan S, Raghavasimhan Sreenivasan, Cheng Kangguo, Khakifirooz Ali
Year of Publication 11.07.2017
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Year of Publication 11.07.2017
Patent
METHOD OF PREVENTING EPITAXY CREEPING UNDER THE SPACER
Basker Veeraraghavan S, Raghavasimhan Sreenivasan, Cheng Kangguo, Khakifirooz Ali
Year of Publication 11.08.2016
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Year of Publication 11.08.2016
Patent