Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C
Koenraad, P M, Blom, F A P, Langerak, C J G M, Leys, M R, Perenboom, J A A J, Singleton, J, Spermon, S J R M, Vleuten, W C van der, Voncken, A P J, Wolter, J H
Published in Semiconductor science and technology (01.08.1990)
Published in Semiconductor science and technology (01.08.1990)
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Characterization of silicon δ-doped GaAs grown by MBE at various temperatures
Koenraad, P.M., Voncken, A.P.J., Singleton, J., Blom, F.A.P., Langerak, C.J.G.M., Leys, M.R., Perenboom, J.A.A.J., Spermon, S.J.R.M., van Vleuten, W.C., Wolter, J.H.
Published in Surface science (01.04.1990)
Published in Surface science (01.04.1990)
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