Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates
Li, Hongjian, Khoury, Michel, Bonef, Bastien, Alhassan, Abdullah I, Mughal, Asad J, Azimah, Ezzah, Samsudin, Muhammad E.A, De Mierry, Philippe, Nakamura, Shuji, Speck, James S, DenBaars, Steven P
Published in ACS applied materials & interfaces (18.10.2017)
Published in ACS applied materials & interfaces (18.10.2017)
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Journal Article
Disorder effects in nitride semiconductors: impact on fundamental and device properties
Weisbuch, Claude, Nakamura, Shuji, Wu, Yuh-Renn, Speck, James S.
Published in Nanophotonics (Berlin, Germany) (18.11.2020)
Published in Nanophotonics (Berlin, Germany) (18.11.2020)
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Journal Article
Progress of InGaN-Based Red Micro-Light Emitting Diodes
Li, Panpan, Li, Hongjian, Wong, Matthew S., Chan, Philip, Yang, Yunxuan, Zhang, Haojun, Iza, Mike, Speck, James S., Nakamura, Shuji, Denbaars, Steven P.
Published in Crystals (Basel) (01.04.2022)
Published in Crystals (Basel) (01.04.2022)
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Journal Article
High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes
Pan, Chih-Chien, Tanaka, Shinichi, Wu, Feng, Zhao, Yuji, Speck, James S, Nakamura, Shuji, DenBaars, Steven P, Feezell, Daniel
Published in Applied physics express (01.06.2012)
Published in Applied physics express (01.06.2012)
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Journal Article
H2O vapor assisted growth of β-Ga2O3 by MOCVD
Alema, Fikadu, Zhang, Yuewei, Mauze, Akhil, Itoh, Takeki, Speck, James S., Hertog, Brian, Osinsky, Andrei
Published in AIP advances (01.08.2020)
Published in AIP advances (01.08.2020)
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Journal Article
Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration
Almogbel, Abdullah S., Zollner, Christian J., Saifaddin, Burhan K., Iza, Michael, Wang, Jianfeng, Yao, Yifan, Wang, Michael, Foronda, Humberto, Prozheev, Igor, Tuomisto, Filip, Albadri, Abdulrahman, Nakamura, Shuji, DenBaars, Steven P., Speck, James S.
Published in AIP advances (01.09.2021)
Published in AIP advances (01.09.2021)
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Journal Article
Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells
Kowsz, Stacy J, Young, Erin C, Yonkee, Benjamin P, Pynn, Christopher D, Farrell, Robert M, Speck, James S, DenBaars, Steven P, Nakamura, Shuji
Published in Optics express (20.02.2017)
Published in Optics express (20.02.2017)
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Journal Article
High-Modulation-Efficiency, Integrated Waveguide Modulator–Laser Diode at 448 nm
Shen, Chao, Ng, Tien Khee, Leonard, John T, Pourhashemi, Arash, Oubei, Hassan M, Alias, Mohd S, Nakamura, Shuji, DenBaars, Steven P, Speck, James S, Alyamani, Ahmed Y, Eldesouki, Munir M, Ooi, Boon S
Published in ACS photonics (17.02.2016)
Published in ACS photonics (17.02.2016)
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Journal Article
Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition
Foronda, Humberto M., Mazumder, Baishakhi, Young, Erin C., Laurent, Matthew A., Li, Youli, DenBaars, Steven P., Speck, James S.
Published in Journal of crystal growth (01.10.2017)
Published in Journal of crystal growth (01.10.2017)
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Journal Article
Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio
Zollner, Christian J., Yao, Yifan, Wang, Michael, Wu, Feng, Iza, Michael, Speck, James S., DenBaars, Steven P., Nakamura, Shuji
Published in Crystals (Basel) (01.08.2021)
Published in Crystals (Basel) (01.08.2021)
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Journal Article
Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon
Ewing, Jacob, Lynsky, Cheyenne, Zhang, Jiaao, Shapturenka, Pavel, Wong, Matthew, Smith, Jordan, Iza, Michael, Speck, James S., DenBaars, Stephen P.
Published in Crystals (Basel) (28.08.2022)
Published in Crystals (Basel) (28.08.2022)
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Journal Article
Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades
Hestroffer, Karine, Lund, Cory, Li, Haoran, Keller, Stacia, Speck, James S., Mishra, Umesh K.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.04.2016)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.04.2016)
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Journal Article
Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer
Wong, Matthew S., Chan, Philip, Lim, Norleakvisoth, Zhang, Haojun, White, Ryan C., Speck, James S., Denbaars, Steven P., Nakamura, Shuji
Published in Crystals (Basel) (01.05.2022)
Published in Crystals (Basel) (01.05.2022)
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Journal Article
Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges
Wong, Matthew S., Raj, Aditya, Chang, Hsun-Ming, Rienzi, Vincent, Wu, Feng, Ewing, Jacob J., Trageser, Emily S., Gee, Stephen, Palmquist, Nathan C., Chan, Philip, Kang, Ji Hun, Speck, James S., Mishra, Umesh K., Nakamura, Shuji, DenBaars, Steven P.
Published in AIP advances (01.01.2023)
Published in AIP advances (01.01.2023)
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Journal Article