A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET
Zelsacher, R., Wood, A.C.G., Bacher, E., Prax, E., Sorschag, K., Krumrey, J., Baumgartl, J.
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
Get full text
Journal Article
Conference Proceeding
Topographical and structural investigations of phosphorous-doped silicon films
Sorschag, K., Gold, H., Lutz, J., Kuchar, F., Pippan, M., Noll, H.
Published in Applied physics. A, Materials science & processing (01.03.1998)
Published in Applied physics. A, Materials science & processing (01.03.1998)
Get full text
Journal Article
Exploring the limits of high temperature thermal processing for advanced 8-inch power technology manufacturing
Rupp, T., Dyroff, N., Gaertner, T., Gross, T., Gruber, H., Neidhart, T., Peri, H., Riss, J., Schagerl, G., Stefaner, A., Sorschag, K., Danzfuss, B., Domes, H., Gatterbauer, J., Geiger, H., Kaspar, J., Komposch, A., Leicht, M., Mayer, B., Muehlbacher, K.H., Pairitsch, H., Rogge, W., Simmnacher, B., Steinacher, S., Trieblnig, E., Wald, G., Weber, K., Wiebauer, W., Wiesinger, K., Henoeckl, A.
Published in 2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530) (2004)
Published in 2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530) (2004)
Get full text
Conference Proceeding