Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate
Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Solomnikova, A. V.
Published in Technical physics (01.11.2023)
Published in Technical physics (01.11.2023)
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Peculiarities of admittance spectroscopy study of wide bandgap semiconductors on the example of diamond
Solomnikova, A V, Lukashkin, V. A., Derevianko, O V
Published in E3S web of conferences (01.01.2020)
Published in E3S web of conferences (01.01.2020)
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Properties of Semipolar GaN Grown on a Si(100) Substrate
Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Seredova, N. V., Solomnikova, A. V., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2019)
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Surface Morphology of AlN Layers Grown on a Nano-Structured SiNx/Si(100) Template
Bessolov, V. N., Konenkova, E. V., Rodin, S. N., Solomnikova, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.04.2024)
Published in Semiconductors (Woodbury, N.Y.) (01.04.2024)
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Characterization of electronic properties of natural type IIb diamonds
Zubkov, V.I., Solomnikova, A.V., Post, J.E., Gaillou, E., Butler, J.E.
Published in Diamond and related materials (01.02.2017)
Published in Diamond and related materials (01.02.2017)
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