Control of structure, size and density of Ge dot on Si (1 0 0) through multistep procedure
Wakayama, Y., Gerth, G., Werner, P., Gösele, U., Sokolov, L.V.
Published in Journal of crystal growth (01.11.2001)
Published in Journal of crystal growth (01.11.2001)
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Unexpected travel of Lomer-type dislocations in Ge/GexSi1-x/Si(001) heterostructures
Bolkhovityanov, Y.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V.
Published in Thin solid films (01.10.2016)
Published in Thin solid films (01.10.2016)
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Dislocation interaction of layers in the Ge/Ge-seed/Ge Si1−/Si(0 0 1) (x∼ 0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V., Vasilenko, A.P.
Published in Acta materialia (01.08.2013)
Published in Acta materialia (01.08.2013)
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Unzipping and movement of Lomer-type edge dislocations in Ge/GeSi/Si(001) heterostructures
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V.
Published in Journal of crystal growth (01.02.2018)
Published in Journal of crystal growth (01.02.2018)
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Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(001) system and its role in the formation of the core structure of edge misfit dislocations
Bolkhovityanov, Y.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V.
Published in Acta materialia (01.01.2013)
Published in Acta materialia (01.01.2013)
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Journal Article
Dislocation interaction of layers in the Ge/Ge-seed/GexSi1−x/Si(001) (x∼0.3–0.5) system: Trapping of misfit dislocations on the Ge-seed/GeSi interface
Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V., Vasilenko, A.P.
Published in Acta materialia (01.08.2013)
Published in Acta materialia (01.08.2013)
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Edge misfit dislocations in [Ge.sub.x][Si.sub.1-x]/Si interlayer in their formation
Bolkhovityanov, Yu.B, Gutakovskii, A.K, Deryabin, A.S, Sokolov, L.V
Published in Physics of the solid state (01.09.2011)
Published in Physics of the solid state (01.09.2011)
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Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface
Bolkhovityanov, Yu. B., Vasilenko, A. P., Gutakovskii, A. K., Deryabin, A. S., Putyato, M. A., Sokolov, L. V.
Published in Physics of the solid state (01.10.2011)
Published in Physics of the solid state (01.10.2011)
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Combined study of RHEED spot profiles and intensity oscillations during MBE growth of Ge on Ge(111)
Däweritz, L., Pchelyakov, O.P., Mashanov, V.I., Sokolov, L.V., Stenin, S.I., Berger, H.
Published in Surface science (01.05.1990)
Published in Surface science (01.05.1990)
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