GaNP-based photovoltaic device integrated on Si substrate
Dvoretckaia, Liliia N., Bolshakov, Alexey D., Mozharov, Alexey M., Sobolev, Maxim S., Kirilenko, Demid A., Baranov, Artem I., Mikhailovskii, Vladimir Yu, Neplokh, Vladimir V., Morozov, Ivan A., Fedorov, Vladimir V., Mukhin, Ivan S.
Published in Solar energy materials and solar cells (01.03.2020)
Published in Solar energy materials and solar cells (01.03.2020)
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Effective Suppression of Antiphase Domains in GaP(N)/GaP Heterostructures on Si(001)
Bolshakov, Alexey D, Fedorov, Vladimir V, Koval, Olga Yu, Sapunov, Georgiy A, Sobolev, Maxim S, Pirogov, Evgeniy V, Kirilenko, Demid A, Mozharov, Alexey M, Mukhin, Ivan S
Published in Crystal growth & design (07.08.2019)
Published in Crystal growth & design (07.08.2019)
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1.3 μm optically-pumped monolithic VCSEL based on GaAs with InGa(Al)As superlattice active region
Kryzhanovskaya, Natalia V, Likhachev, Alexey I, Blokhin, Sergey A, Blokhin, Alexey A, Pirogov, Evgeniy V, Sobolev, Maxim S, Babichev, Andrey V, Gladyshev, Andrey G, Karachinsky, Leonid Ya, Novikov, Innokenty I, Andryushkin, Vladislav V, Denisov, Dmitrii V, Egorov, Anton Yu
Published in Laser physics letters (01.07.2022)
Published in Laser physics letters (01.07.2022)
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GaPAsN-based light-emitting diode on silicon
Lazarenko, Alexandra A., Nikitina, Ekaterina V., Gudovskikh, Alexander S., Baranov, Artem I., Sobolev, Maxim S., Pirogov, Evgeny V., Egorov, Anton Yu
Published in Optics and laser technology (01.09.2020)
Published in Optics and laser technology (01.09.2020)
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Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling
Vasilkova, E.I., Pirogov, E.V., Sobolev, M.S., Baranov, A.I., Gudovskikh, A.S., Bouravleuv, A.D.
Published in Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki (01.12.2022)
Published in Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki (01.12.2022)
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Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2-2.6 um
Vasilkova, E. I., Pirogov, E. V., Sobolev, M. S., Ubiyvovk, E. V., Mizerov, A. M., Seredin, P. V.
Published in Kondensirovannye sredy i mežfaznye granicy (2023)
Published in Kondensirovannye sredy i mežfaznye granicy (2023)
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