Rectal perforation after laser hemorrhoidoplasty: a case report
Smets, Q., Gaillard, M., Van de Weijer, M., Komen, N.
Published in Techniques in coloproctology (07.06.2024)
Published in Techniques in coloproctology (07.06.2024)
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Journal Article
Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors
Illarionov, Yu. Yu, Karl, A., Smets, Q., Kaczer, B., Knobloch, T., Panarella, L., Schram, T., Brems, S., Cott, D., Asselberghs, I., Grasser, T.
Published in NPJ 2D materials and applications (02.02.2024)
Published in NPJ 2D materials and applications (02.02.2024)
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Journal Article
Analysis of BTI in 300 mm integrated dual-gate WS2 FETs
Panarella, L., Smets, Q., Verreck, D., Schram, T., Cott, D., Asselberghs, I., Kaczer, B.
Published in 2022 Device Research Conference (DRC) (26.06.2022)
Published in 2022 Device Research Conference (DRC) (26.06.2022)
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Conference Proceeding
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs
Panarella, L., Kaczer, B., Smets, Q., Verreck, D., Schram, T., Cott, D., Lin, D., Tyaginov, S., Asselberghs, I., de la Rosa, C. Lockhart, Kar, G. S., Afanas'ev, V.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer
Ghosh, S., Smets, Q., Banerjee, S., Schram, T., Kennes, K., Verheyen, R., Kumar, P., Boulon, M.-E., Groven, B., Silva, H. M., Kundu, S., Cott, D., Lin, D., Favia, P., Nuytten, T., Phommahaxay, A., Asselberghs, I., De La Rosa, C., Kar, G. S., Brems, S.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices
Bizindavyi, J., Verhulst, A. S., Smets, Q., Soree, B., Groeseneken, G.
Published in 2019 Device Research Conference (DRC) (01.06.2019)
Published in 2019 Device Research Conference (DRC) (01.06.2019)
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Conference Proceeding
Introducing 2D-FETs in Device Scaling Roadmap using DTCO
Ahmed, Z., Afzalian, A., Schram, T., Jang, D., Verreck, D., Smets, Q., Schuddinck, P., Chehab, B., Sutar, S., Arutchelvan, G., Soussou, A., Asselberghs, I., Spessot, A., Radu, I. P., Parvais, B., Ryckaert, J., Na, M. H.
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
Published in 2020 IEEE International Electron Devices Meeting (IEDM) (12.12.2020)
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Conference Proceeding
Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes
Smets, Q., Verhulst, A. S., El Kazzi, S., Mocuta, A., Thean, V.-Y, Heyns, M. M.
Published in 2015 73rd Annual Device Research Conference (DRC) (01.06.2015)
Published in 2015 73rd Annual Device Research Conference (DRC) (01.06.2015)
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Conference Proceeding
Understanding and modelling the PBTI reliability of thin-film IGZO transistors
Chasin, A., Franco, J., Triantopoulos, K., Dekkers, H., Rassoul, N., Belmonte, A., Smets, Q., Subhechha, S., Claes, D., van Setten, M. J., Mitard, J., Delhougne, R., Afanas'ev, V., Kaczer, B., Kar, G. S.
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Conference Proceeding
Scaled transistors with 2D materials from the 300mm fab
Asselberghs, I., Schram, T., Smets, Q., Groven, B., Brems, S., Phommahaxay, A., Cott, D., Dupuy, E., Radisic, D., Marneffe, J-F de, Thiam, A., Li, W., Devriendt, K., Gaur, A., Maurice, T., Lin, D., Morin, P., Radu, I.P.
Published in 2020 IEEE Silicon Nanoelectronics Workshop (SNW) (01.06.2020)
Published in 2020 IEEE Silicon Nanoelectronics Workshop (SNW) (01.06.2020)
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Conference Proceeding
EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration
Ghosh, S., Kruv, A., Smets, Q., Schram, T., Leech, D. J., Ding, T., Turkani, V., Groven, B., Dangel, A., Probst, G., Uhrmann, T., Wimplinger, M., Asselberghs, I., Lockhart de la Rosa, C. J., Brems, S., Kar, G. S.
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
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Conference Proceeding
Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions
El Kazzi, S., Smets, Q., Ezzedini, M., Rooyackers, R., Verhulst, A., Douhard, B., Bender, H., Collaert, N., Merckling, C., Heyns, M.M, Thean, A.
Published in Journal of crystal growth (15.08.2015)
Published in Journal of crystal growth (15.08.2015)
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Journal Article
WS2 transistors on 300 mm wafers with BEOL compatibility
Schram, T., Smets, Q., Groven, B., Heyne, M. H., Kunnen, E., Thiam, A., Devriendt, K., Delabie, A., Lin, D., Lux, M., Chiappe, D., Asselberghs, I., Brus, S., Huyghebaert, C., Sayan, S., Juncker, A., Caymax, M., Radu, I. P.
Published in 2017 47th European Solid-State Device Research Conference (ESSDERC) (01.09.2017)
Published in 2017 47th European Solid-State Device Research Conference (ESSDERC) (01.09.2017)
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Conference Proceeding
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, N., Alian, A., Arimura, H., Boccardi, G., Eneman, G., Franco, J., Ivanov, Ts, Lin, D., Mitard, J., Ramesh, S., Rooyackers, R., Schaekers, M., Sibaya-Hernandez, A., Sioncke, S., Smets, Q., Vais, A., Vandooren, A., Veloso, A., Verhulst, A., Verreck, D., Waldron, N., Walke, A., Witters, L., Yu, H., Zhou, X., Thean, A. V.-Y
Published in 2016 International Conference on IC Design and Technology (ICICDT) (01.06.2016)
Published in 2016 International Conference on IC Design and Technology (ICICDT) (01.06.2016)
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Conference Proceeding
Analog parameters of solid source Zn diffusion In X Ga 1− X As nTFETs down to 10 K
Bordallo, C, Martino, J A, Agopian, P G D, Alian, A, Mols, Y, Rooyackers, R, Vandooren, A, Verhulst, A S, Smets, Q, Simoen, E, Claeys, C, Collaert, N
Published in Semiconductor science and technology (01.12.2016)
Published in Semiconductor science and technology (01.12.2016)
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Journal Article
Tunnel FETs using Phosphorene/ReS2 heterostructures
Balaji, Y., Smets, Q., Lin, D., Asselberghs, I., Radu, I., Groeseneken, G.
Published in 2019 Device Research Conference (DRC) (01.06.2019)
Published in 2019 Device Research Conference (DRC) (01.06.2019)
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Conference Proceeding
High yield and process uniformity for 300 mm integrated WS2 FETs
Schram, T., Smets, Q., Radisic, D., Groven, B., Cott, D., Thiam, A., Li, W., Dupuy, E., Vandersmissen, K., Maurice, T., Asselberghs, I., Radu, I.
Published in 2021 Symposium on VLSI Technology (13.06.2021)
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Published in 2021 Symposium on VLSI Technology (13.06.2021)
Conference Proceeding
Analog parameters of solid source Zn diffusion InXGa1−XAs nTFETs down to 10 K
Bordallo, C, Martino, J A, Agopian, P G D, Alian, A, Mols, Y, Rooyackers, R, Vandooren, A, Verhulst, A S, Smets, Q, Simoen, E, Claeys, C, Collaert, N
Published in Semiconductor science and technology (28.10.2016)
Published in Semiconductor science and technology (28.10.2016)
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Journal Article
Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach
Kundu, S., van Dorp, D. H., Schram, T., Smets, Q., Banerjee, S., Groven, B., Cott, D., Decoster, S., Bezard, P., Lazzarino, F., Banerjee, K., Ghosh, S., de Marneffe, J. F., Morin, P., de La Rosa, C. J. L., Asselberghs, I., Kar, G. S.
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
Published in 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (11.06.2023)
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Conference Proceeding
Staggered band gap n + In sub(0.5)Ga sub(0.5)As/p + GaAs sub(0.5)Sb sub(0.5) Esaki diode investigations for TFET device predictions
El Kazzi, S, Smets, Q, Ezzedini, M, Rooyackers, R, Verhulst, A, Douhard, B, Bender, H, Collaert, N, Merckling, C, Heyns, M M, Thean, A
Published in Journal of crystal growth (05.08.2015)
Published in Journal of crystal growth (05.08.2015)
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Journal Article