In-plane imperfections in GaN studied by x-ray diffraction
Vickers, M E, Kappers, M J, Datta, R, McAleese, C, Smeeton, T M, Rayment, F D G, Humphreys, C J
Published in Journal of physics. D, Applied physics (21.05.2005)
Published in Journal of physics. D, Applied physics (21.05.2005)
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Journal Article
Conference Proceeding
Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy
Smeeton, T. M., Kappers, M. J., Barnard, J. S., Vickers, M. E., Humphreys, C. J.
Published in Physica Status Solidi (b) (01.11.2003)
Published in Physica Status Solidi (b) (01.11.2003)
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Journal Article
Conference Proceeding
Exciton localization in InGaN/GaN single quantum well structures
Graham, D. M., Vala, A. Soltani, Dawson, P., Godfrey, M. J., Kappers, M. J., Smeeton, T. M., Barnard, J. S., Humphreys, C. J., Thrush, E. J.
Published in Physica Status Solidi (b) (01.11.2003)
Published in Physica Status Solidi (b) (01.11.2003)
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Journal Article
Conference Proceeding
Continuous-wave operation of ingan multiple quantum well laser diodes grown by molecular beam epitaxy
KAUER, M, HOOPER, S. E, BOUSQUET, V, JOHNSON, K, ZELLWEGER, C, BARNES, J. M, WINDLE, J, SMEETON, T. M, HEFFEMAN, J
Published in Electronics letters (23.06.2005)
Published in Electronics letters (23.06.2005)
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Journal Article
Hydrogen permeation through mild steel in temperature range 20-500°C measured by hydrogen collection method
Dean, F. W. H., Smeeton, T. M., Fray, D. J.
Published in Materials science and technology (01.08.2002)
Published in Materials science and technology (01.08.2002)
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Journal Article
Sensitisation of erbium luminescence in erbium-implanted alumina
Kenyon, A.J., Chryssou, C.E., Smeeton, T.M., Humphreys, C.J., Hole, D.E.
Published in Optical materials (01.05.2006)
Published in Optical materials (01.05.2006)
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Journal Article
Conference Proceeding
Performance and degradation characteristics of blue-violet laser diodes grown by molecular beam epitaxy
Tan, W. S., Kauer, M., Hooper, S. E., Smeeton, T. M., Bousquet, V., Rossetti, M., Heffernan, J., Xiu, H., Humphreys, C. J.
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
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Conference Proceeding
Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots
Sénès, M., Smith, K.L., Smeeton, T.M., Hooper, S.E., Heffernan, J.
Published in Physica. E, Low-dimensional systems & nanostructures (01.04.2008)
Published in Physica. E, Low-dimensional systems & nanostructures (01.04.2008)
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Journal Article
Conference Proceeding
Degradation of III-nitride laser diodes grown by molecular beam epitaxy
Xiu, H., Thrush, E. J., Kauer, M., Smeeton, T. M., Hooper, S. E., Heffernan, J., Humphreys, C. J.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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Journal Article
High-power and long-lifetime InGaN blue-violet laser diodes grown by molecular beam epitaxy
Tan, W S, Kauer, M, Hooper, S E, Barnes, J M, Rossetti, M, Smeeton, T M, Bousquet, V, Heffernan, J
Published in Electronics letters (28.02.2008)
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Published in Electronics letters (28.02.2008)
Journal Article
Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
Kauer, M, Hooper, S E, Bousquet, V, Johnson, K, Zellweger, C, Barnes, J M, Windle, J, Smeeton, T M, Heffernan, J
Published in Electronics letters (23.06.2005)
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Published in Electronics letters (23.06.2005)
Journal Article