The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface
Smalc‐Koziorowska, J., Moneta, J., Muzioł, G., Chromiński, W., Kernke, R., Albrecht, M., Schulz, T., Belabbas, I.
Published in Journal of microscopy (Oxford) (01.03.2024)
Published in Journal of microscopy (Oxford) (01.03.2024)
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Journal Article
New light on the photocatalytic performance of NH4V4O10 and its composite with rGO
Nadolska, M, Szkoda, M, Trzciński, K, Ryl, J, Lewkowicz, A, Sadowska, K, Smalc-Koziorowska, J, Prześniak-Welenc, M
Published in Scientific reports (09.03.2023)
Published in Scientific reports (09.03.2023)
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Journal Article
Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy
Bazioti, C., Papadomanolaki, E., Kehagias, Th, Walther, T., Smalc-Koziorowska, J., Pavlidou, E., Komninou, Ph, Karakostas, Th, Iliopoulos, E., Dimitrakopulos, G. P.
Published in Journal of applied physics (21.10.2015)
Published in Journal of applied physics (21.10.2015)
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Journal Article
TEM investigations of (In,Ga)N/GaN quantum structures
Manolaki, P., Häusler, I., Kirmse, H., Neumann, W., Smałc-Koziorowska, J., Skierbiszewski, C.
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
Published in Physica status solidi. A, Applications and materials science (01.11.2008)
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Journal Article
Conference Proceeding
AlGaN/GaN HEMT structures on ammono bulk GaN substrate
Kruszewski, P, Prystawko, P, Kasalynas, I, Nowakowska-Siwinska, A, Krysko, M, Plesiewicz, J, Smalc-Koziorowska, J, Dwilinski, R, Zajac, M, Kucharski, R, Leszczynski, M
Published in Semiconductor science and technology (01.07.2014)
Published in Semiconductor science and technology (01.07.2014)
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Journal Article
Electron microscopy observations of radiation damage in irradiated and annealed tungsten
Grzonka, J., Ciupiński, Ł., Smalc-Koziorowska, J., Ogorodnikova, O.V., Mayer, M., Kurzydłowski, K.J.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.2014)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.2014)
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Journal Article
The effect of high-pressure plastic forming on the structure and strength of AA5083 and AA5754 alloys intended for fasteners
Kulczyk, M., Skiba, J., Pachla, W., Smalc-Koziorowska, J., Przybysz, S., Przybysz, M.
Published in Bulletin of the Polish Academy of Sciences. Technical sciences (01.08.2020)
Published in Bulletin of the Polish Academy of Sciences. Technical sciences (01.08.2020)
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Journal Article
Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates
Domagala, J.Z., Smalc-Koziorowska, J., Iwinska, M., Sochacki, T., Amilusik, M., Lucznik, B., Fijalkowski, M., Kamler, G., Grzegory, I., Kucharski, R., Zajac, M., Bockowski, M.
Published in Journal of crystal growth (15.12.2016)
Published in Journal of crystal growth (15.12.2016)
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Journal Article
Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds
Amilusik, M., Sochacki, T., Lucznik, B., Fijalkowski, M., Smalc-Koziorowska, J., Weyher, J.L., Teisseyre, H., Sadovyi, B., Bockowski, M., Grzegory, I.
Published in Journal of crystal growth (01.10.2014)
Published in Journal of crystal growth (01.10.2014)
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Journal Article
Conference Proceeding
Bandgap behavior of InGaN/GaN short period superlattices grown by metal‐organic vapor phase epitaxy
Staszczak, G., Gorczyca, I., Grzanka, E., Smalc‐Koziorowska, J., Targowski, G., Czernecki, R., Siekacz, M., Grzanka, S., Skierbiszewski, C., Schulz, T., Christensen, N. E., Suski, T.
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
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Journal Article
InGaN light emitting diodes for 415 nm-520 nm spectral range by plasma assisted MBE
Siekacz, M, Szańkowska, M. Ł., Feduniewicz-Zmuda, A., Smalc-Koziorowska, J., Cywiński, G., Grzanka, S., Wasilewski, Z. R., Grzegory, I., Łucznik, B., Porowski, S., Skierbiszewski, C.
Published in Physica status solidi. C (01.06.2009)
Published in Physica status solidi. C (01.06.2009)
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Journal Article
Stacking faults in plastically relaxed InGaN epilayers
Moneta, J, Grzanka, E, Turski, H, Skierbiszewski, C, Smalc-Koziorowska, J
Published in Semiconductor science and technology (01.03.2020)
Published in Semiconductor science and technology (01.03.2020)
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Journal Article
Homoepitaxial growth of HVPE-GaN doped with Si
Iwinska, M., Sochacki, T., Amilusik, M., Kempisty, P., Lucznik, B., Fijalkowski, M., Litwin-Staszewska, E., Smalc-Koziorowska, J., Khapuridze, A., Staszczak, G., Grzegory, I., Bockowski, M.
Published in Journal of crystal growth (15.12.2016)
Published in Journal of crystal growth (15.12.2016)
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Journal Article
Compositional and strain analysis of In(Ga)N/GaN short period superlattices
Dimitrakopulos, G. P., Vasileiadis, I. G., Bazioti, C., Smalc-Koziorowska, J., Kret, S., Dimakis, E., Florini, N., Kehagias, Th, Suski, T., Karakostas, Th, Moustakas, T. D., Komninou, Ph
Published in Journal of applied physics (14.01.2018)
Published in Journal of applied physics (14.01.2018)
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Journal Article
Electron microscopy investigation of extended defects in a-plane gallium nitride layers grown on r-plane sapphire by molecular beam epitaxy
Smalc-Koziorowska, J., Komninou, Ph, Sahonta, S.-L., Kioseoglou, J., Tsiakatouras, G., Georgakilas, A.
Published in Physica status solidi. C (01.12.2008)
Published in Physica status solidi. C (01.12.2008)
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Journal Article
Photo-etching of GaN: Revealing nano-scale non-homogeneities
Weyher, J.L., Smalc-Koziorowska, J., Bańkowska, M., Dzięcielewski, I., Marona, Ł., Perlin, P.
Published in Journal of crystal growth (15.09.2015)
Published in Journal of crystal growth (15.09.2015)
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