Stable SRAM cell design for the 32 nm node and beyond
Chang, L., Fried, D.M., Hergenrother, J., Sleight, J.W., Dennard, R.H., Montoye, R.K., Sekaric, L., McNab, S.J., Topol, A.W., Adams, C.D., Guarini, K.W., Haensch, W.
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
Published in Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005 (2005)
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Conference Proceeding
Precision, Double XTEM Sample Preparation of Site Specific Si Nanowires
Gignac, LM, Mittal, S, Bangsaruntip, S, Cohen, GM, Sleight, JW
Published in Microscopy and microanalysis (01.07.2009)
Published in Microscopy and microanalysis (01.07.2009)
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Journal Article
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
Nayfeh, H.M., Singh, D.V., Hergenrother, J.M., Sleight, J.W., Ren, Z., Dokumaci, O., Black, L., Chidambarrao, D., Venigalla, R., Pan, J., Natzle, W., Tessier, B.L., Ott, J.A., Khare, M., Guarini, K.W., Ieong, M., Haensch, W.
Published in IEEE electron device letters (01.04.2006)
Published in IEEE electron device letters (01.04.2006)
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Journal Article
Spin splitting of single 0D impurity states in semiconductor heterostructure Quantum Wells
Deshpande, MR, Sleight, JW, Reed, MA, Wheeler, RG, Matyi, RJ
Published in Physical review letters (19.02.1996)
Published in Physical review letters (19.02.1996)
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Journal Article
Study of hypernuclei by associated production
Pile, PH, Bart, S, Chrien, RE, Millener, DJ, Sutter, RJ, Tsoupas, N, Peng, J, Mishra, CS, Hungerford, EV, Kishimoto, T, Tang, L, von Witsch W, Xu, Z, Maeda, K, Gill, D, McCrady, R, Quinn, B, Seydoux, J, Sleight, JW, Stearns, RL, Plendl, H, Rafatian, A, Reidy, J
Published in Physical review letters (20.05.1991)
Published in Physical review letters (20.05.1991)
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Journal Article
LOCOS-induced stress effects on thin-film SOI devices
Cheng-Liang Huang, Soleimani, H.R., Grula, G.J., Sleight, J.W., Villani, A., Ali, H., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.04.1997)
Published in IEEE transactions on electron devices (01.04.1997)
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Journal Article
Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
Singh, D.V., Hergenrother, J.M., Sleight, J.W., Ren, Z., Nayfeh, H., Dokumaci, O., Black, L., Chidambarrao, D., Venigalla, R., Pan, J., Tessier, B.L., Nomura, A., Ott, J.A., Khare, M., Guarini, K.W., Ieong, M., Haensch, W.
Published in 2005 IEEE International SOI Conference Proceedings (2005)
Published in 2005 IEEE International SOI Conference Proceedings (2005)
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Conference Proceeding
Transient measurements of SOI body contact effectiveness
Sleight, J.W., Mistry, K.R., Antoniadis, D.A.
Published in IEEE electron device letters (01.12.1998)
Published in IEEE electron device letters (01.12.1998)
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Journal Article
Fluctuation Effects on a Strongly Pinned Vortex Lattice in a Thin Type-II Superconducting Wire
Ling, XS, McCambridge, JD, Rizzo, ND, Sleight, JW, Prober, DE, Motowidlo, LR, Zeitlin, BA
Published in Physical review letters (30.01.1995)
Published in Physical review letters (30.01.1995)
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Journal Article
Low-dimensional resonant tunnelling and Coulomb blockade: a comparison of fabricated versus impurity confinement
Deshpande, M R, Hornbeck, E S, Kozodoy, P, Dekker, N H, Sleight, J W, Reed, M A, Fernando, C L, Frensley, W R
Published in Semiconductor science and technology (01.11.1994)
Published in Semiconductor science and technology (01.11.1994)
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Journal Article
Conference Proceeding
Aggressively scaled (0.143 /spl mu/m/sup 2/) 6T-SRAM cell for the 32 nm node and beyond
Fried, D.M., Hergenrother, J.M., Topol, A.W., Chang, L., Sekaric, L., Sleight, J.W., McNab, S.J., Newbury, J., Steen, S.E., Gibson, G., Zhang, Y., Fuller, N.C.M., Bucchignano, J., Lavoie, C., Cabral Jr, C., Canaperi, D., Dokumaci, O., Frank, D.J., Duch, E.A., Babich, I., Wong, K., Ott, J.A., Adams, C.D., Dalton, T.J., Nunes, R., Medeiros, D.R., Viswanathan, R., Ketchen, M., Ieong, M., Haensch, W., Guarini, K.W.
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
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Conference Proceeding
Electron-spectroscopic study of vertical In1-xGaxAs quantum dots
Sleight, JW, Hornbeck, ES, Deshpande, MR, Wheeler, RG, Reed, MA, Bowen, RC, Frensley, WR, Randall, JN, Matyi, RJ
Published in Physical review. B, Condensed matter (15.06.1996)
Published in Physical review. B, Condensed matter (15.06.1996)
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Journal Article
Energy-averaged weak localization in chaotic microcavities
Keller, MW, Mittal, A, Sleight, JW, Wheeler, RG, Prober, DE, Sacks, RN, Shtrikmann, H
Published in Physical review. B, Condensed matter (15.01.1996)
Published in Physical review. B, Condensed matter (15.01.1996)
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Journal Article
Zeeman splitting of single semiconductor impurities in resonant tunneling heterostructures
Deshpande, M.R., Sleight, J.W., Reed, M.A., Wheeler, R.G., Matyi, R.J.
Published in Superlattices and microstructures (01.01.1996)
Published in Superlattices and microstructures (01.01.1996)
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Journal Article
Vertical conduction in thin Si/CaF2/Si structures
SLEIGHT, J. W, REED, M. A, CHIH-CHEN CHO, GNADE, B
Published in Superlattices and microstructures (01.01.1993)
Published in Superlattices and microstructures (01.01.1993)
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Journal Article