Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility
Sunil, Athira, Rana SK, Masud, Lederer, Maximilian, Raffel, Yannick, Müller, Franz, Olivo, Ricardo, Hoffmann, Raik, Seidel, Konrad, Kämpfe, Thomas, Chakrabarti, Bhaswar, De, Sourav
Published in Advanced intelligent systems (01.04.2024)
Published in Advanced intelligent systems (01.04.2024)
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Journal Article
1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation
Sk, Masud Rana, Thunder, Sunanda, Muller, Franz, Laleni, Nellie, Raffel, Yannick, Lederer, Maximilian, Pirro, Luca, Chohan, Talha, Hsuen, Jing-Hua, Wu, Tian-Li, Seidel, Konrad, Kampfe, Thomas, De, Sourav, Chakrabarti, Bhaswar
Published in IEEE transactions on nanotechnology (01.01.2023)
Published in IEEE transactions on nanotechnology (01.01.2023)
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Journal Article
28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview
Raffel, Yannick, Müller, Franz, Thunder, Sunanda, Sk, Masud Rana, Lederer, Maximilian, Pirro, Luca, Beyer, Sven, Seidel, Konrad, Chakrabarti, Bhaswar, Kämpfe, Thomas, De, Sourav
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
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Journal Article
Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET
Sk, Masud Rana, Pande, Shubham, Müller, Franz, Raffel, Yannick, Lederer, Maximilian, Pirro, Luca, Beyer, Sven, Seidel, Konrad, Kämpfe, Thomas, De, Sourav, Chakrabarti, Bhaswar
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
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Journal Article
Spike-Time Dependent Plasticity in HfO₂-Based Ferroelectric FET Synapses
Masud Rana, Sk, Roy, Sourodeep, Lederer, Maximilian, Raffel, Yannick, Pirro, Luca, Chohan, Talha, Seidel, Konrad, De, Sourav, Chakrabarti, Bhaswar
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
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Conference Proceeding
Fixed charges at the HfO 2 /SiO2 interface: Impact on the memory window of FeFET
Sk, Masud Rana, Pande, Shubham, Müller, Franz, Raffel, Yannick, Lederer, Maximilian, Pirro, Luca, Beyer, Sven, Seidel, Konrad, Kämpfe, Thomas, De, Sourav, Chakrabarti, Bhaswar
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
Published in Memories - Materials, Devices, Circuits and Systems (01.07.2023)
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Journal Article
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation
Sk, Masud Rana, Thunder, Sunanda, Lehninger, David, Sanctis, Shawn, Raffel, Yannick, Lederer, Maximilian, Jank, Michael P M, Kämpfe, Thomas, De, Sourav, Chakrabarti, Bhaswar
Published in ACS applied electronic materials (28.02.2023)
Published in ACS applied electronic materials (28.02.2023)
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Journal Article
Code construction and performance evaluation of Space Time Trellis Code (STTC) over Rayleigh fading channel
Rana, S. K. Masud, Alam, S. M. Shamsul, Fatema, K. J.
Published in 14th International Conference on Computer and Information Technology (ICCIT 2011) (01.12.2011)
Published in 14th International Conference on Computer and Information Technology (ICCIT 2011) (01.12.2011)
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Conference Proceeding