Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes
Sjoblom, G., Westlinder, J., Olsson, J.
Published in IEEE transactions on electron devices (01.10.2005)
Published in IEEE transactions on electron devices (01.10.2005)
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Journal Article
A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack
Wu, D, Lindgren, A.-C, Persson, S, Sjoblom, G, von Haartman, M, Seger, J, Hellstrom, P.-E, Olsson, J, Blom, H.-O, Zhang, S.-L, Ostling, M, Vainonen-Ahlgren, E, Li, W.-M, Tois, E, Tuominen, M
Published in IEEE electron device letters (01.03.2003)
Published in IEEE electron device letters (01.03.2003)
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Journal Article
Processing and evaluation of metal gate/high-κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-κ dielectric
ABERMANN, S, EFAVI, J. K, SJOBLOM, G, LEMME, M. C, OLSSON, J, BERTAGNOLLI, E
Published in Microelectronic engineering (01.05.2007)
Published in Microelectronic engineering (01.05.2007)
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Conference Proceeding
Journal Article
Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics
ABERMANN, S, EFAVI, J, SJÖBLOM, G, LEMME, M, OLSSON, J, BERTAGNOLLI, E
Published in Microelectronics and reliability (2007)
Published in Microelectronics and reliability (2007)
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Conference Proceeding
Journal Article
Novel Silicon-on-SiC Substrate with Superior Thermal and RF Performance
Olsson, J., Vallin, O., Sjoblom, G., Norstrom, H., Smith, U., Vestling, L., Berg, S.
Published in 2007 IEEE International SOI Conference (01.10.2007)
Published in 2007 IEEE International SOI Conference (01.10.2007)
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Conference Proceeding
Low-resistivity ZrNx metal gate in MOS devices
WESTLINDER, J, MALMSTRÖM, J, SJÖBLOM, G, OLSSON, J
Published in Solid-state electronics (01.08.2005)
Published in Solid-state electronics (01.08.2005)
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Journal Article
Variable work function in MOS capacitors utilizing nitrogen-controlled TiNx gate electrodes
WESTLINDER, Jörgen, SJÖBLOM, Gustaf, OLSSON, Jörgen
Published in Microelectronic engineering (01.11.2004)
Published in Microelectronic engineering (01.11.2004)
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Journal Article
Metal gate work function extraction using Fowler-Nordheim tunneling techniques
Sjöblom, G., Pantisano, L., Schram, T., Olsson, J., Afanas’ev, V., Heyns, M.
Published in Microelectronic engineering (01.06.2005)
Published in Microelectronic engineering (01.06.2005)
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Journal Article
Conference Proceeding
Interface passivation mechanisms in metal gated oxide capacitors
Lujan, G.S., Schram, T., Sjoblom, G., Witters, T., Kubicek, S., De Gendt, S., Heyns, M., De Meyer, K.
Published in Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) (2004)
Published in Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) (2004)
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Conference Proceeding
Processing and evaluation of metal gate/high- κ/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO 2 and HfO 2 as high- κ dielectric
Abermann, S., Efavi, J.K., Sjoblom, G., Lemme, M.C., Olsson, J., Bertagnolli, E.
Published in Microelectronic engineering (2007)
Published in Microelectronic engineering (2007)
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Journal Article
Protease inhibitors in rheumatoid synovial fluid: a quantitative analysis
Ekerot, L, Sjöblom, K G, Ohlsson, K, Wollheim, F A
Published in Clinical and experimental rheumatology (01.07.1983)
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Published in Clinical and experimental rheumatology (01.07.1983)
Journal Article
Effect of D.C. Electric Fields on Liquid-Liquid Settling
Sjoblom, G. L, Goren, S. L
Published in Industrial & engineering chemistry fundamentals (01.11.1966)
Published in Industrial & engineering chemistry fundamentals (01.11.1966)
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Journal Article
A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O3 gate stack
Wu, D., Lindgren, A.-C., Persson, S., Sjoblom, G., von Haartman, M., Seger, J., Hellstrom, P.-E., Olsson, J., Blom, H.-O., Zhang, S.-L., Ostling, M., Vainonen-Ahlgren, E., Li, W.-M., Tois, E., Tuominen, M.
Published in IEEE electron device letters (01.03.2003)
Published in IEEE electron device letters (01.03.2003)
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Journal Article
A novel strained Si/0.7/Ge/0.3/ surface-channel pMOSFET with an ALD TiN/Al(2)O(3)/HfAlO(x)/Al(2)O(3) gate stack
Wu, D, Lindgren, A-C, Persson, S, Sjoblom, G, von Haartman, M, Seger, J, Hellstrom, P-E, Olsson, J, Blom, H-O, Zhang, S-L, Ostling, M, Vainonen-Ahlgren, E, Li, W-M, Tois, E, Tuominen, M
Published in IEEE electron device letters (01.03.2003)
Published in IEEE electron device letters (01.03.2003)
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Journal Article
A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O 3 gate stack
Wu, D., Lindgren, A.-C., Persson, S., Sjoblom, G., von Haartman, M., Seger, J., Hellstrom, P.-E., Olsson, J., Blom, H.-O., Zhang, S.-L., Ostling, M., Vainonen-Ahlgren, E., Li, W.-M., Tois, E., Tuominen, M.
Published in IEEE electron device letters (01.03.2003)
Published in IEEE electron device letters (01.03.2003)
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Journal Article
A novel strained Si(0.7)Ge(0.3) surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlO(x)/Al2O3 gate stack
Wu, D., Lindgren, A.-C., Persson, S, Sjoblom, G, von Haartman, M, Seger, J, Hellstrom, P.-E., Olsson, J, Blom, H.-O., Zhang, S.-L., Ostling, M, Vainonen-Ahlgren, E, Li, W.-M., Tois, E, Tuominen, M
Published in IEEE electron device letters (01.03.2003)
Published in IEEE electron device letters (01.03.2003)
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Journal Article