Step bunching phenomena on Si(0 0 1) surface induced by DC heating during sublimation and Si deposition
Rodyakina, E.E., Sitnikov, S.V., Rogilo, D.I., Latyshev, A.V.
Published in Journal of crystal growth (15.08.2019)
Published in Journal of crystal growth (15.08.2019)
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Journal Article
Kinetics of transformation of the atomic step bunches shape under electromigration conditions on the Si(001) surface
Razzhivina, M.E., Rodyakina, E.E., Sitnikov, S.V.
Published in Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki (01.10.2021)
Published in Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki (01.10.2021)
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Journal Article
Atomic steps on an ultraflat Si(111) surface upon sublimation
Sitnikov, S. V., Latyshev, A. V., Kosolobov, S. S.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
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Journal Article
Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
Sitnikov, S. V., Kosolobov, S. S., Latyshev, A. V.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
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Journal Article