Predictive worst case statistical modeling of 0.8- mu m BICMOS bipolar transistors: a methodology based on process and mixed device/circuit level simulators
Kizilyalli, I.C., Ham, T.E., Singhal, K., Kearney, J.W., Lin, W., Thoma, M.J.
Published in IEEE transactions on electron devices (01.05.1993)
Published in IEEE transactions on electron devices (01.05.1993)
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Statistical device models from worst case files and electrical test data
Singhal, K., Visvanathan, V.
Published in IEEE transactions on semiconductor manufacturing (01.11.1999)
Published in IEEE transactions on semiconductor manufacturing (01.11.1999)
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Conference Proceeding
Technology CAD at AT&T
Lloyd, Peter, McAndrew, Colin C., McLennan, Michael J., Nassif, Sani R., Singhal, Kishore, Singhal, Kumud, Zeitzoff, Peter M., Darwish, Mohamed N., Haruta, Ken, Lentz, Janet L., Vuong, Hong-Ha, Pinto, Mark R., Rafferty, Conor S., Kizilyalli, Isik C.
Published in Microelectronics (01.03.1995)
Published in Microelectronics (01.03.1995)
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