Search Results - "Sim, Ha-Bin" :: K.UTB vyhledávací portál

Reducing Burn‐In Loss of Organic Photovoltaics by a Robust Electron‐Transporting Layer

by Oh, Hyerim, Sim, Ha‐Bin, Han, Seung Hee, Kwon, Yong‐Ju, Park, Jae Hyun, Kim, Myung Hwa, Kim, Jin Young, Kim, Won‐Suk, Kim, Kyungkon
Published in Advanced materials interfaces (01.06.2019)

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3-Hydroxy-2-(trialkylsilyl)phenyl Triflate: A Benzyne Precursor Triggered via 1,3-C-sp(2)-to-O Silyl Migration

by Kwon, Yong-Ju, Jeon, Young-Kyo, Sim, Ha-Bin, Oh, In-Young, Shin, Inji, Kim, Won-Suk
Published in Organic letters (17.11.2017)

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3‑Hydroxy-2-(trialkylsilyl)phenyl Triflate: A Benzyne Precursor Triggered via 1,3-C-sp2‑to‑O Silyl Migration

by Kwon, Yong-Ju, Jeon, Young-Kyo, Sim, Ha-Bin, Oh, In-Young, Shin, Inji, Kim, Won-Suk
Published in Organic letters (17.11.2017)

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3-Hydroxy-2-(trialkylsilyl)phenyl Triflate: A Benzyne Precursor Triggered via 1,3-C-sp 2 -to-O Silyl Migration

by Kwon, Yong-Ju, Jeon, Young-Kyo, Sim, Ha-Bin, Oh, In-Young, Shin, Inji, Kim, Won-Suk
Published in Organic letters (17.11.2017)

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Stripper composition for IGZO substrate, method of preparation thereof and semiconductor component capable of improving surface cleaning and electron mobility and improving characteristics of an IGZO element by adjusting an IGZO etch rate of a stripper

by LEE, SEUNG-EUN, SIM, HA-BIN, PARK, JONG-MO, CHO, JANG-WOO, PARK, JOON-HYUN, KIM, SE-HOON, LEE, DONG-HUN, YOON, JOON-SIK
Year of Publication 01.04.2024

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Stripper composition for IGZO substrate, method of preparation thereof and semiconductor device capable of preventing corrosion of the IGZO substrate and improving photoresist stripping performance

by LEE, SEUNG-EUN, SIM, HA-BIN, PARK, JONG-MO, CHO, JANG-WOO, PARK, JOON-HYUN, KIM, SE-HOON, LEE, DONG-HUN, YOON, JOON-SIK
Year of Publication 01.04.2024

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Patent