In situ SiN passivation of AlGaN/GaN HEMTs by molecular beam epitaxy
Heying, B., Smorchkova, I.P., Coffie, R., Gambin, V., Chen, Y.C., Sutton, W., Lam, T., Kahr, M.S., Sikorski, K.S., Wojtowicz, M.
Published in Electronics letters (2007)
Published in Electronics letters (2007)
Get full text
Journal Article