Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins
Nolting, F, Scholl, A, Stöhr, J, Seo, J. W, Fompeyrine, J, Siegwart, H, Locquet, J.-P, Anders, S, Lüning, J, Fullerton, E. E, Toney, M. F, Scheinfein, M. R, Padmore, H. A
Published in Nature (London) (15.06.2000)
Published in Nature (London) (15.06.2000)
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Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
Daix, N., Uccelli, E., Czornomaz, L., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Shiu, K.-T., Cheng, C.-W., Krishnan, M., Lofaro, M., Kobayashi, M., Sadana, D., Fompeyrine, J.
Published in APL materials (01.08.2014)
Published in APL materials (01.08.2014)
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CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
Czornomaz, L., El Kazzi, M., Hopstaken, M., Caimi, D., Mächler, P., Rossel, C., Bjoerk, M., Marchiori, C., Siegwart, H., Fompeyrine, J.
Published in Solid-state electronics (01.08.2012)
Published in Solid-state electronics (01.08.2012)
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Journal Article
Observation of Antiferromagnetic Domains in Epitaxial Thin Films
Scholl, A., Stöhr, J., Lüning, J., Seo, J. W., Fompeyrine, J., Siegwart, H., J.-P. Locquet, Nolting, F., Anders, S., Fullerton, E. E., Scheinfein, M. R., Padmore, H. A.
Published in Science (American Association for the Advancement of Science) (11.02.2000)
Published in Science (American Association for the Advancement of Science) (11.02.2000)
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Journal Article
Optical properties of epitaxial SrHfO3 thin films grown on Si
Sousa, M., Rossel, C., Marchiori, C., Siegwart, H., Caimi, D., Locquet, J.-P., Webb, D. J., Germann, R., Fompeyrine, J., Babich, K., Seo, J. W., Dieker, Ch
Published in Journal of applied physics (15.11.2007)
Published in Journal of applied physics (15.11.2007)
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SrHfO3 as gate dielectric for future CMOS technology
ROSSEL, C, SOUSA, M, GERMANN, R, TAPPONNIER, A, BABICH, K, MARCHIORI, C, FOMPEYRINE, J, WEBB, D, CAIMI, D, MEREU, B, ISPAS, A, LOCQUET, J. P, SIEGWART, H
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
Djara, V., Deshpande, V., Uccelli, E., Daix, N., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Shiu, K.-T, Weng, C.-W, Krishnan, M., Lofaro, M., Steiner, R., Sadana, D., Lubyshev, D., Liu, A., Czornomaz, L., Fompeyrine, J.
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
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Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillars
Richter, M., Uccelli, E., Taboada, A.G., Caimi, D., Daix, N., Sousa, M., Marchiori, C., Siegwart, H., Falub, C.V., von Känel, H., Isa, F., Isella, G., Pezous, A., Dommann, A., Niedermann, P., Fompeyrine, J.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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GaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxy
RICHTER, M, ROSSEL, C, FOMPEYRINE, J, WEBB, D. J, TOPURIA, T, GERL, C, SOUSA, M, MARCHIORI, C, CAIMI, D, SIEGWART, H, RICE, P. M
Published in Journal of crystal growth (15.05.2011)
Published in Journal of crystal growth (15.05.2011)
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1.2 nm capacitance equivalent thickness gate stacks on Si-passivated GaAs
El Kazzi, M., Webb, D.J., Czornomaz, L., Rossel, C., Gerl, C., Richter, M., Sousa, M., Caimi, D., Siegwart, H., Fompeyrine, J., Marchiori, C.
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices
Andersson, C., Rossel, C., Sousa, M., Webb, D.J., Marchiori, C., Caimi, D., Siegwart, H., Panayiotatos, Y., Dimoulas, A., Fompeyrine, J.
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Co-integrating high mobility channels for future CMOS, from substrate to circuits
Czornomaz, L., Daix, N., Uccelli, E., Caimi, D., Sousa, M., Rossel, C., Siegwart, H., Marchiori, C., Fompeyrine, J.
Published in 26th International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2014)
Published in 26th International Conference on Indium Phosphide and Related Materials (IPRM) (01.05.2014)
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Conference Proceeding
In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction
Webb, D.J., Fompeyrine, J., Nakagawa, S., Dimoulas, A., Rossel, C., Sousa, M., Germann, R., Alvarado, S.F., Locquet, J.P., Marchiori, C., Siegwart, H., Callegari, A., Kiewra, E., Sun, Y., De Souza, J., Hoffmann, N.
Published in Microelectronic engineering (01.09.2007)
Published in Microelectronic engineering (01.09.2007)
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Charging effects on the carrier mobility in silicon-on-insulator wafers covered with a high-k layer
Halley, D., Norga, G., Guiller, A., Fompeyrine, J., Locquet, J. P., Drechsler, U., Siegwart, H., Rossel, C.
Published in Journal of applied physics (15.11.2003)
Published in Journal of applied physics (15.11.2003)
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III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
Uccelli, E., Daix, N., Czornomaz, L., Caimi, D., Rossel, C., Sousa, M., Siegwart, H., Marchiori, C., Hartmann, J. M., Fompeyrine, J.
Published in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2014)
Published in 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) (01.06.2014)
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Tandem triple-pass Fabry-Perot interferometer for applications in the near infrared
Gehrsitz, S, Sigg, H, Siegwart, H, Krieger, M, Heine, C, Morf, R, Reinhart, F K, Martin, W, Rudigier, H
Published in Applied optics (2004) (01.08.1997)
Published in Applied optics (2004) (01.08.1997)
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Focused-ion beam modification of waveguide photonic devices
Patterson, B.D., Musil, C., Siegwart, H., Vonlanthen, A.
Published in Microelectronic engineering (1995)
Published in Microelectronic engineering (1995)
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Mobility and Dit distributions for p -channel MOSFETs with HfO2/LaGeO x passivating layers on germanium
Andersson, C., Süess, M. J., Webb, D. J., Marchiori, C., Sousa, M., Caimi, D., Siegwart, H., Fompeyrine, J.
Published in Journal of applied physics (01.12.2011)
Published in Journal of applied physics (01.12.2011)
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Solid phase epitaxy of SrTiO3 on (Ba,Sr)O∕Si(100): The relationship between oxygen stoichiometry and interface stability
Norga, G. J., Marchiori, C., Rossel, C., Guiller, A., Locquet, J. P., Siegwart, H., Caimi, D., Fompeyrine, J., Seo, J. W., Dieker, Ch
Published in Journal of applied physics (15.04.2006)
Published in Journal of applied physics (15.04.2006)
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