Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments
Sidorov, G. Yu, Sidorov, Yu. G., Shwets, V. A., Varavin, V. S.
Published in Semiconductors (Woodbury, N.Y.) (01.05.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2021)
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Journal Article
The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface
Gorshkov, D. V., Sidorov, G. Yu, Sabinina, I. V., Sidorov, Yu. G., Marin, D. V., Yakushev, M. V.
Published in Technical physics letters (01.08.2020)
Published in Technical physics letters (01.08.2020)
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Journal Article
HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector
Marchishin, I. V., Sabinina, I. V., Sidorov, G. Yu, Yakushev, M. V., Varavin, V. S., Remesnik, V. G., Predein, A. V., Dvoretsky, S. A., Vasil’ev, V. V., Sidorov, Yu. G., Marin, D. V., Kovchavtsev, A. P., Latyshev, A. V.
Published in Journal of communications technology & electronics (01.03.2020)
Published in Journal of communications technology & electronics (01.03.2020)
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Journal Article
A Megapixel Matrix Photodetector of the Middle Infrared Range
Bazovkin, V. M., Varavin, V. S., Vasil’ev, V. V., Glukhov, A. V., Gorshkov, D. V., Dvoretsky, S. A., Kovchavtsev, A. P., Makarov, Yu. S., Marin, D. V., Mzhelsky, I. V., Polovinkin, V. G., Remesnik, V. G., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Stroganov, A. S., Tsarenko, A. V., Yakushev, M. V., Latyshev, A. V.
Published in Journal of communications technology & electronics (01.09.2019)
Published in Journal of communications technology & electronics (01.09.2019)
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Journal Article
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns
Zverev, A. V., Suslyakov, A. O., Sabinina, I. V., Sidorov, G. Yu, Yakushev, M. V., Kuzmin, V. D., Varavin, V. S., Remesnik, V. G., Makarov, Yu. S., Predein, A. V., Gorshkov, D. V., Dvoretsky, S. A., Vasil’ev, V. V., Sidorov, Yu. G., Latyshev, A. V., Kremis, I. I.
Published in Journal of communications technology & electronics (01.09.2019)
Published in Journal of communications technology & electronics (01.09.2019)
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Journal Article
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
Varavin, V. S., Vasilyev, V. V., Guzev, A. A., Dvoretsky, S. A., Kovchavtsev, A. P., Marin, D. V., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Tsarenko, A. V., Yakushev, M. V.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2016)
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Journal Article
HgCdTe p+-n structures grown by MBE on Si (013) substrates for high operating temperature SWIR detectors
Bazovkin, V. M., Dvoretskiy, S. A., Guzev, A. A., Kovchavtsev, A. P., Marin, D. V., Panova, Z. V., Sabinina, I. V., Sidorov, Yu. G., Sidorov, G. Yu, Tsarenko, A. V., Varavin, V. S., Vasiliev, V. V., Yakushev, M. V.
Published in Physica status solidi. C (01.07.2016)
Published in Physica status solidi. C (01.07.2016)
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Journal Article
Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films
Feklistov, K V, Lemzyakov, A G, Prosvirin, I P, Gismatulin, A A, Shklyaev, A A, Zhivodkov, Y A, Krivyakin, G, Komonov, A I, Kozhukhov, S, Spesivsev, E V, Gulyaev, D V, Abramkin, D S, Pugachev, A M, Esaev, D G, Sidorov, G Yu
Published in Materials research express (01.12.2020)
Published in Materials research express (01.12.2020)
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Journal Article
384x288 readout integrated circuit for MWIR and LWIR HgCdTe based FPA
Zverev, A V, Makarov, Yu S, Mikhantiev, E A, Sabinina, I V, Sidorov, G Yu, Dvoretskiy, S A
Published in Journal of physics. Conference series (02.11.2015)
Published in Journal of physics. Conference series (02.11.2015)
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Journal Article
Acceptor states in HgCdTe films grown by molecular-beam epitaxy on GaAs and Si substrates
Yakushev, M. V., Mynbaev, K. D., Bazhenov, N. L., Varavin, V. S., Mikhailov, N. N., Marin, D. V., Dvoretsky, S. A., Sidorov, Yu. G.
Published in Physica status solidi. C (01.07.2016)
Published in Physica status solidi. C (01.07.2016)
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Journal Article
High-performance 320 × 256 long-wavelength infrared photodetector arrays based on CdHgTe layers grown by molecular beam epitaxy
Predein, A. V., Sidorov, Yu. G., Sabinina, I. V., Vasil’ev, V. V., Sidorov, G. Yu, Marchishin, I. V.
Published in Optoelectronics, instrumentation, and data processing (2013)
Published in Optoelectronics, instrumentation, and data processing (2013)
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Journal Article
Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxy
Pociask, M, Izhnin, I I, Dvoretsky, S A, Mikhailov, N N, Sidorov, Yu G, Varavin, V S, Mynbaev, K D, Sheregii, E
Published in Semiconductor science and technology (01.09.2008)
Published in Semiconductor science and technology (01.09.2008)
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Journal Article
Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and Al$_{\mathbf{2}}$$O$_{\mathbf{3}}$$ Grown by Atomic Layer Deposition
Sidorov, G. Yu, Gorshkov, D. V., Sidorov, Yu. G., Sabinina, I. V., Varavin, V. S.
Published in Optoelectronics, instrumentation, and data processing (01.09.2020)
Published in Optoelectronics, instrumentation, and data processing (01.09.2020)
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Journal Article
Arsenic incorporation in MBE-grown HgCdTe studied with the use of ion milling
Izhnin, I. I., Dvoretsky, S. A., Mynbaev, K.D., Mikhailov, N. N., Sidorov, Yu. G., Varavin, V. S., Jakiela, R., Pociask, M., Savitsky, G.
Published in Physica status solidi. C (01.06.2010)
Published in Physica status solidi. C (01.06.2010)
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Journal Article
Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages
Voitsekhovskii, A. V., Dzyadukh, S. M., Gorn, D. I., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, G. Yu, Yakushev, M. V.
Published in Journal of communications technology & electronics (01.12.2023)
Published in Journal of communications technology & electronics (01.12.2023)
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Journal Article
Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy
Voitsekhovskii, A. V., Dzyadukh, S. M., Gorn, D. I., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, G. Yu, Yakushev, M. V.
Published in Journal of communications technology & electronics (01.09.2023)
Published in Journal of communications technology & electronics (01.09.2023)
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Journal Article
Effect of Surface Treatment on the Charge Density at the Interface between GdHgTe Epitaxial Films and AlO Grown by Atomic Layer Deposition
Sidorov, G. Yu, Gorshkov, D. V., Sidorov, Yu. G., Sabinina, I. V., Varavin, V. S.
Published in Optoelectronics, instrumentation, and data processing (2020)
Published in Optoelectronics, instrumentation, and data processing (2020)
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Journal Article
Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm
Varavin, V.S., Sabinina, I.V., Sidorov, G.Yu, Marin, D.V., Remesnik, V.G., Predein, A.V., Dvoretsky, S.A., Vasilyev, V.V., Sidorov, Yu.G., Yakushev, M.V., Latyshev, A.V.
Published in Infrared physics & technology (01.03.2020)
Published in Infrared physics & technology (01.03.2020)
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