Kinetics of SiGe chemical vapor deposition from chloride precursors
Lovtsus, A.A., Segal, A.S., Sid’ko, A.P., Talalaev, R.A., Storck, P., Kadinski, L.
Published in Journal of crystal growth (25.01.2006)
Published in Journal of crystal growth (25.01.2006)
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Journal Article
Conference Proceeding
Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors
Segal, A.S., Galyukov, A.O., Kondratyev, A.V., Sid’ko, A.P., Karpov, S.Yu, Makarov, Yu.N., Siebert, W., Storck, P.
Published in Microelectronic engineering (01.05.2001)
Published in Microelectronic engineering (01.05.2001)
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Journal Article
Modeling of dislocation dynamics in germanium Czochralski growth
Artemyev, V.V., Smirnov, A.D., Kalaev, V.V., Mamedov, V.M., Sidko, A.P., Podkopaev, O.I., Kravtsova, E.D., Shimansky, A.F.
Published in Journal of crystal growth (15.06.2017)
Published in Journal of crystal growth (15.06.2017)
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Journal Article
Quasi-thermodynamic model of SiGe epitaxial growth
Segal, A.S., Karpov, S.Yu, Sid’ko, A.P., Makarov, Yu.N.
Published in Journal of crystal growth (01.05.2001)
Published in Journal of crystal growth (01.05.2001)
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Journal Article
Quasi-thermodynamic model of SiGe epitaxial growth
SEGAL, A. S, KARPOV, S. Yu, SID'KO, A. P, MAKAROV, Yu. N
Published in Journal of crystal growth (2001)
Get full text
Published in Journal of crystal growth (2001)
Conference Proceeding
Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors
SEGAL, A. S, GALYUKOV, A. O, KONDRATYEV, A. V, SID'KO, A. P, KARPOV, S. Yu, MAKAROV, Yu. N, SIEBERT, W, STORCK, P
Published in Microelectronic engineering (2001)
Get full text
Published in Microelectronic engineering (2001)
Conference Proceeding