A study of the intermediate layer in 3C–SiC/6H–SiC heterostructures
Lebedev, A.A., Zamoryanskaya, M.V., Davydov, S. Yu, Kirilenko, D.A., Lebedev, S.P., Sorokin, L.M., Shustov, D.B., Shcheglov, M.P.
Published in Journal of crystal growth (15.06.2014)
Published in Journal of crystal growth (15.06.2014)
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Journal Article
Optical and electrical properties of 4H-SiC irradiated with Xe ions
Kalinina, E. V., Chuchvaga, N. A., Bogdanova, E. V., Strel’chuk, A. M., Shustov, D. B., Zamoryanskaya, M. V., Skuratov, V. A.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2014)
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Journal Article
Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures
Lebedev, A. A., Zamorianskaya, M. V., Davydov, S. Yu, Kirilenko, D. A., Lebedev, S. P., Sorokin, L. M., Shustov, D. B., Scheglov, M. P.
Published in Semiconductors (Woodbury, N.Y.) (01.11.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.11.2013)
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Journal Article
Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate
Shustov, D. B., Lebedev, A. A., Lebedev, S. P., Nelson, D. K., Sitnikova, A. A., Zamoryanskaya, M. V.
Published in Semiconductors (Woodbury, N.Y.) (01.09.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2013)
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Journal Article
INVESTIGATION OF HETEROSTRUCTURES 3C-SIC/15R-SIC
Lebedev, S P, Lebedev, A A, Nikitina, I P, Shkoldin, V A, Shustov, D B
Published in Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki (01.01.2015)
Published in Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki (01.01.2015)
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